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Modeling of Mid-Infrared Multi-Quantum Well Lasers

Published online by Cambridge University Press:  10 February 2011

A. D. Andreev
A. D. Andreev*
Affiliation:
A. F. Ioffe Physico-Technical Institute of Russian Academy of Sciences, Polytechnicheskaya 26, St.-Petersburg 194021, Russia+7-812-247-1017; [email protected]
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Abstract

Threshold characteristics of mid-infrared MQW lasers have been studied theoretically. Auger recombination rates in strained quantum wells have been calculated in the framework of 8×8 Kane model taking account of spin-orbit interaction. It is demonstrated that the Auger coefficients of both CHCC and CHHS processes essentially depends on the QW parameters (strain, QW width, barrier bandgap), but have relatively weak (non-exponential) temperature dependence. It is shown that the laser characteristics can be improved for optimized laser structures, when the Auger rate is decreased.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 117
Copyright
Copyright © Materials Research Society 1998

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References

1. Wang, C.A. and Choi, H.K., Appl. Phys. Lett., 70, 802 (1997)Google Scholar
2. Lane, B., Wu, D., Rybaltowski, A., Yi, H., Diaz, J., Razeghi, M., Appl. Phys. Lett., 70,443 (1997)Google Scholar
3. Garbuzov, D.Z., Martimelli, R.U., Menna, R.J., York, P.K., Lee, H., Narayan, S.Y., Appl. Phys. Lett., 67, 1346 (1995)Google Scholar
4. Andreev, A.D., Zegrya, G.G., Appl. Phys. Lett., 70, 603 (1997)Google Scholar
5. Andreev, A.D., Zegrya, G.G. in “In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared”, ed. by Choi, H.K., Zory, P.S., Proceeding SPIE, 3001, 364–376 (1997)Google Scholar
6. Hyberten, M.S., Kazarinov, R.F., Baraff, G.A., Akerman, D.A., Shtengel, G.E., in “Physics and Simulation of Optoelectronic Devices III”, ed. by Osinski, M., Chow, W., Proceedings SPIE, 2399, 132 (1995)Google Scholar
7. Aliev, G.N., Andreev, A.D., Coshug-Toates, O., Datsiev, R.M., Ivanov, S.V., Sorokin, S.V., Seisyan, R.P., J. Cryst. Growth, accepted for publication (1997)Google Scholar
8. Jin Wang, von Allmen, P., Leburton, J.-P, Linden, K.J., IEEE J. Quantum Electron., QE–31, 864 (1995)Google Scholar
9. Andreev, A.D., Zegrya, G.G., IEE Proc. Optoelectronics, 144, No 5 (1997)Google Scholar
10. Krijn, M.P.C.M., Semicond. Sci. Technol., 6, 27 (1991)Google Scholar
11. Andreev, A.D., Zegrya, G.G., Semiconductors, 31, 297 (1997)Google Scholar
12. Gelmont, B.L., Zh. Eksp. Teor. Fiz., 75, 536 (1978) [Sov. Phys. JETP, 48, 268 (1978)]Google Scholar