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Modeling of HgCdTe Heterojunction Devices

Published online by Cambridge University Press:  25 February 2011

Ken Zanio  and
Ken Hay
Ken Zanio
Affiliation:
Ford Aerospace & Communications Corporation Ford Road, Newport Beach, CA 92658-9983
Ken Hay
Affiliation:
Ford Aerospace & Communications Corporation Ford Road, Newport Beach, CA 92658-9983
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Abstract

A model for generating the composition and doping profiles from growth and diffusion parameters was developed for heterostructure devices. Poisson's equation was applied to these structures to predict barriers in the conduction band to minority carrier flow for long wavelength HgCdTe infrared detectors prepared by LPE techniques. Spectral response and quantum efficiency measurements illustrate the presence of these barriers and support the use of this model in predicting barrier formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986 , 39
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

Bratt, P. R. and Casselman, T. N., J. Vac. Sci. Technol. A 3(1), 238 (1985).Google Scholar
[2] Migliorato, P. and White, A. M., Solid-State Electron. 26, 65 (1983).Google Scholar
[3] Zanio, K. and Massopust, T., J. Electron. Mat. 15, 103 (1986).CrossRefGoogle Scholar
[4] Lundstrum, M. S. and Schuelke, R. J., IEEE Trans. ED–30, 1151 (1983).CrossRefGoogle Scholar