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Modeling of Boron Diffusion in Polysilicon-On-Silicon Layers

Published online by Cambridge University Press:  28 February 2011

Akif Sultan ,
Shubneesh Batra ,
Melvyn Lobo ,
Keunhyung Park  and
Sanjay Banerjee
Akif Sultan
Affiliation:
Microelectronics Research Center, University of Texas, Austin, TX 78712
Shubneesh Batra
Affiliation:
Microelectronics Research Center, University of Texas, Austin, TX 78712
Melvyn Lobo
Affiliation:
Microelectronics Research Center, University of Texas, Austin, TX 78712
Keunhyung Park
Affiliation:
Microelectronics Research Center, University of Texas, Austin, TX 78712
Sanjay Banerjee
Affiliation:
Microelectronics Research Center, University of Texas, Austin, TX 78712
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Abstract

In the present study we have modeled the diffusion of boron in single crystal silicon from an ion-implanted polysilicon film deposited on a single crystal silicon substrate. Modeling has been done for both BF2 and boron implants in the polysilicon layer. A new phenomenological model for a diffusivity has been implemented in the PEPPER simulation program using an effective concentration-dependent diffusivity approach. The effective diffusivities of boron in single crystal silicon have been extracted using Boltzmann-Matano analysis. The modeling has been implemented for a wide range of furnace anneal conditions (800°C to 950°C, from 30 min. to 6 hours), and implant conditions (BF2 doses varied from 5×1015 to 2×10'16 cm-2 at 70 keV, boron dose of 5×1015 cm-2 at 20 keV).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 653
Copyright
Copyright © Materials Research Society 1993

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References

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