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Modeling of Aspect Ratio Dependent Etching in an Inductively Coupled Plasma

Published online by Cambridge University Press:  15 February 2011

J.S. Han  and
J.P. McVittie
J.S. Han
Affiliation:
Center for Integrated Systems Stanford, CA 94305.
J.P. McVittie
Affiliation:
Center for Integrated Systems Stanford, CA 94305.
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Abstract

SPEEDIE is used to simulate aspect ratio dependent etching of silicon dioxide in an inductively coupled plasma. Overhang test structures and standard via/trench structures are etched in the system under standard processing conditions. Results from the overhang test structure yield information about the ion angular distribution and aid in the development of the model. The simultaneous etching and deposition model includes such effects as ion enhanced polymer deposition, angle dependent polymer sputtering, Langmuir adsorption saturation model, and surface dependent sticking probability. The model is able to capture all the lag trends, defined as the difference in etch rate for different aspect ratios, and profiles accurately.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 389: Symposium R – Modedling and Simulation of Thin-Film Processing , 1995 , 197
Copyright
Copyright © Materials Research Society 1995

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References

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