Hostname: page-component-6bf8c574d5-r4mrb Total loading time: 0 Render date: 2025-03-09T17:29:42.441Z Has data issue: false hasContentIssue false
  • English
  • Français

Modeling and Simulation of the Percolation Problem in High-Tc Superconductors: Role of Crystallographic Constraints on Grain Boundary Connectivity

Published online by Cambridge University Press:  15 March 2011

Megan Frary  and
Christopher A. Schuh
Megan Frary
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology 77 Massachusetts Avenue, Cambridge, MA 02139
Christopher A. Schuh
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology 77 Massachusetts Avenue, Cambridge, MA 02139
Get access

Abstract

Superconductivity in high-Tc materials is often modeled as a percolation problem in which grain boundaries are classified as strong or weak-links for current transmission based on their disorientation angle. Using Monte Carlo simulations, we have explored the topology and percolation thresholds for grain boundary networks in orthorhombic and tetragonal polycrystals where the grain boundary disorientations are assigned in a crystallographically consistent manner. We find that the networks are highly nonrandom, and that the percolation thresholds differ from those found with standard percolation theory. For biaxially textured materials, we have also developed an analytical model that illustrates the role of local crystallographic constraint on the observed nonrandom behavior.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 819: Symposia N/P – Interfacial Engineering for Optimized Properties III , 2004 , N7.7
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Goyal, A, DP, Norton, DM, Kroeger, DK, Christen, Paranthaman, M, ED, Specht, JD, Budai, He, Q, Saffian, B, FA, List, DF, Lee, Hatfield, E, PM, Martin, CE, Klabunde, Mathis, J, Park, C, J. Mater. Res. 12, 2924 (1997).Google Scholar
[2] DM, Feldmann, JL, Reeves, AA, Polyanskii, Kozlowski, G, RR, Biggers, RM, Nekkanti, Maartense, I, Tomsic, M, Barnes, P, CE, Oberly, TL, Peterson, SE, Babcock, DC, Larbalestier, Appl. Phys. Lett. 77, 2906 (2000).Google Scholar
[3] DT, Verebelyi, DK, Christen, Feenstra, R, Cantoni, C, Goyal, A, DF, Lee, Paranthaman, M, PN, Arendt, RF, DePaula, JR, Groves, Prouteau, C, Appl. Phys. Lett. 76, 1755 (2000).Google Scholar
[4] ED, Specht, Goyal, A, DM, Kroeger, Supercond. Sci. Tech. 13, 592 (2000).Google Scholar
[5] Frary, M, CA, Schuh, Phys. Rev. B accepted (2004).Google Scholar
[6] Goyal, A, ED, Specht, DM, Kroeger, TA, Mason, DJ, Dingley, GN, Riley Jr., MW, Rupich, Appl. Phys. Lett. 66, 2903 (1995).Google Scholar
[7] Goyal, A, ED, Specht, ZL, Wang, DM, Kroeger, Ultramicroscopy 67, 35 (1997).Google Scholar
[8] Iijima, Y, Onabe, K, Futaki, N, Tanabe, N, Sadakata, N, Kohno, O, Ikeno, Y, J. Appl. Phys. 74, 1905 (1993).Google Scholar
[9] Fernandez, L, Holzapfel, B, Schindler, F, deBoer, B, Attenberger, A, Hanisch, J, Schultz, L, Phys. Rev. B 67, 052503 (2003).Google Scholar
[10] Zeimetz, B, BA, Glowacki, JE, Evetts, Physica C 372-376, 767 (2002).Google Scholar
[11] JE, Evetts, MJ, Hogg, BA, Glowacki, NA, Rutter, VN, Tsaneva, Supercond. Sci. Tech. 12, 1050 (1999).Google Scholar
[12] ZX, Cai, DO, Welch, Phys. Rev. B 45, 2385 (1992).Google Scholar
[13] Frary, M, CA, Schuh, Appl. Phys. Lett. 83, 3755 (2003).Google Scholar
[14] Hoshen, J, Kopelman, R, Phys. Rev. B 14, 3438 (1976).Google Scholar
[15] CS, Nichols, DR, Clarke, Acta Metall. Mater. 39, 995 (1991).Google Scholar