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Modeling and Simulation of Pulsed Laser annealing and ablation of Solid Materials

Published online by Cambridge University Press:  21 February 2011

C. L. Liu
Affiliation:
Solid State Division, Oak Ridge National Laboratory Oak Ridge, TN 37831-6032
R. F. Wood
Affiliation:
Solid State Division, Oak Ridge National Laboratory Oak Ridge, TN 37831-6032
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Abstract

Several different aspects of laser annealing and laser ablation have indicated the need for two-dimensional (2-D) modeling of heat transfer and phase-change effects. We have in mind particularly the laser-induced formation and propagation of buried liquid layers for the case of a-Si on a crystalline silicon substrate, questions related to the early stages of the laser ablation of insulators such as MgO where it is believed that the absorption of the laser radiation occurs at localized but extended regions of high concentrations of defects, and the ejection of particulate material during laser ablation. To deal with these phenomena, a 1-D computational model originally developed for laser annealing has been extended to two-dimensions. the 2-D modeling examines the heat flow and phase changes associated with localized heat sources embedded in a planar material. Concepts such as the state diagram and state array used in the 1-D work have been extended to 2-D and refined. the 2-D program has been rewritten for massively parallel machines such as the intel Paragons in ORNL's Center for Computational Sciences, thus allowing larger and more accurate calculations for complex systems to be carried out in reasonable times.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

1 See Laser and Electron beam Processing of Materials, ed.by White, C. W. and Peercy, P. S., Academic Press, New York (1980); Laser annealing of Semiconductors, ed. by J. M. Poate and J. W. Mayer, academic Press, New York (1982); Pulsed-Laser Processing of Semiconductors, Vol. 23 in the series Semiconductors and Semimetals, ed. by R. F. Wood, C. W. White, and R. T. Young, academic Press, New York (1984); Martin von allmen, p.34--39 in Laser-Beam interactions with Materials. Springer Verlag, Berlin (1987).Google Scholar
2 See Laser ablation: Mechanisms and applications, ed. by John Miller, C. and Haglund, R. F. Jr., Springer Lecture Notes in Physics 389, Berlin-Heidelberg, Springer (1991); Laser ablation Mechanisms and applications-II. ed. by J. C. Miller and D. B. Geohegan, aIP Conference Proceedings 288, New York (1993).Google Scholar
3 Lowndes, D. H., Pennycook, S. J., Jellison, G. E. Jr., Withrow, S. P., and Mashbrun, D. N., J. Mater. Res.2, 648 (1987).Google Scholar
4 Dickinson, J. T., Langford, S. C., Jensen, L. C., Eschbach, P. A., Pederson, L. R., and Mashburn, D. J., J. appl. Phys. 68, 1831 (1990);R. L. Webb, S. C. Langford, L. C. Jensen, and J. T. Dickinson, Mat. Res. Soc. Symp. Proc. 236, 21 (1992).Google Scholar
5 Wood, R. F. and Geist, G. A., Phys. Rev. Lett. 57, 873 (1986).Google Scholar
6 Wood, R. F. and Geist, G. A., Phys. Rev. B 34, 2606 (1986) and References therein.Google Scholar
7 Liu, C. L., Leboeuf, J. N., Wood, R. F., Geohegan, D. B., Donato, J. M., Chen, K. R., and Puretzky, A. A., in Proceedings of an Engineering Foundation Conference on Materials Processing and advanced application of Lasers, Palm Coast, Florida, May 16, 1994.Google Scholar
8 Wood, R. F., al Geist, and Liu, C. L., submitted to Phys. Rev. B.Google Scholar
9 Liu, C. L., Wood, R. F., and Lowndes, D. H., to be submitted to Phys. Rev. B.Google Scholar
10 Donovan, E. P., Spaepen, F., Turnbull, D., Poate, J. M., and Jacobson, C. C., Appl. Phys. Lett.42, 698 (1983).Google Scholar
11 Galvin, G. J., Thompson, M. O., Mayer, J. W., Hammond, R. B., Paulter, N., and Peercy, P. S., Phys. Rev. Lett. 48, 33(1982).Google Scholar
12 Lowndes, D. H., Wood, R. F., and Narayan, J., Phys. Rev. Lett. 52, 561 (1984), and References therein.Google Scholar
13 von allmen, M., Mater. Res. Soc. Symp. Proc. 13, 691 (1983), has also applied an enthalpy equation to laser quenching problems.Google Scholar
14 Rose, M., Math. Comput. 14, 249 (1960).Google Scholar
15 Explosive crystallization, first reported in a-Sb films during the last century [G. Gore, Philos. Mag. 9, 73 (1855)], occurs in a-Si and Ge irradiated by cw lasers [see, e.g., G. Auvert et al, Appl. Phys. Lett. 39, 724 (1981)].Google Scholar
16 Gilmer, G. H. and Leamy, H. J., p. 227 in Laser and Electron Beam Processing of Materials, ed. by White, C. W. and Peercy, P. S., Academic Press, New York, 1980.Google Scholar
17 Leamy, H. J. et al, Appl. Phys. Lett. 38, 137 (1981).Google Scholar
18 Lowndes, D. H., Cleland, J. W., J. Fletcher, J. Narayan, Westbrook, R. D., Wood, R. F., Christie, W. H., and Eby, R. E., in Proceedings of the Fifteenth Photovoltaic Specialists Conference, p. 45, Institute of Electrical and Electronics Engineers, New York (1981).Google Scholar
19 Wood, R. F. and Lowndes, D. H., Cryst. Latt. Def. and amorph. Mat. 12, 475 (1985).Google Scholar
20 Lowndes, D. H. et al, in Technical Digest of the 1984 Conference on Lasers and Electro-Optics, p.220, Optical Society of america.Google Scholar