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Modeling and Real-Time Process Monitoring of Organometallic Chemical Vapor Deposition of III-V Phosphides and Nitrides at Low and High Pressures

Published online by Cambridge University Press:  10 February 2011

K.J. Bachmann ,
B.H. Cardelino ,
C.E. Moore ,
C.A. Cardelino ,
N. Sukidi  and
S. Mccall
K.J. Bachmann
Affiliation:
Department of Materials Science and Engineering North Carolina State University, Raleigh, North Carolina 27695
B.H. Cardelino
Affiliation:
Spelman College, Atlanta, Georgia 30314
C.E. Moore
Affiliation:
NASA George C. Marshall Space Flight Center, Huntsville, Alabama 35812
C.A. Cardelino
Affiliation:
School of Earth and Atmospheric Sciences Georgia Institute of Technology, Atlanta, Georgia 30332
N. Sukidi
Affiliation:
Department of Materials Science and Engineering North Carolina State University, Raleigh, North Carolina 27695
S. Mccall
Affiliation:
Department of Materials Science and Engineering North Carolina State University, Raleigh, North Carolina 27695
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Abstract

The purpose of this paper is to review modeling and real-time monitoring by robust methods of reflectance spectroscopy of organometallic chemical vapor deposition processes in extreme regimes of pressure. The merits of p-polarized reflectance spectroscopy under the conditions of chemical beam epitaxy (CBE) and of internal transmission spectroscopy and principal angle spectroscopy at high pressure are assessed. In order to extend OMCVD to materials that exhibit large thermal decomposition pressure at their optimum growth temperature we have designed and built a differentially-pressure-controlled (DCP) OMCVD reactor for use at pressures ≤ 6 atm. We also describe a compact hard-shell (CHS) reactor for extending the pressure range to 100 atm. At such very high pressure the decomposition of source vapors occurs in the vapor phase, and is coupled to flow dynamics and transport. Rate constants for homogeneous gas phase reactions can be predicted based on a combination of first principles and semi-empirical calculations. The pressure dependence of unimolecular rate constants is described by RRKM theory, but requires variational and anharmonicity corrections not included in presently available calculations with the exception of ammonia decomposition. Commercial codes that include chemical reactions and transport exist, but do not adequately cover at present the kinetics of heteroepitaxial crystal growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 569: Symposium U – In Situ Process Diagnostics and Modelling , 1999 , 59
Copyright
Copyright © Materials Research Society 1999

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References

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