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Modeling and Characterization of the Hydrogenated Amorphous Silicon Metal Insulator Semiconductor Photosensors for Digital Radiography

Published online by Cambridge University Press:  01 February 2011

Nader Safavian ,
Y. Vygranenko ,
J. Chang ,
Kyung Ho Kim ,
J. Lai ,
D. Striakhilev ,
A. Nathan ,
G. Heiler ,
T. Tredwell  and
M. Fernandes
Nader Safavian
Affiliation:
[email protected], university of waterloo, ECE, 196 westmount rd. north, unit 203, waterloo, N2L3G5, Canada, 5197728641
Y. Vygranenko
Affiliation:
[email protected], University of Waterloo, Electrical and Computer Engineering, Waterloo, N2L3G5, Canada
J. Chang
Affiliation:
Jeff Chang , University of Waterloo, Electrical and Computer Engineering, Waterloo, N2L3G5, Canada
Kyung Ho Kim
Affiliation:
[email protected], University of Waterloo, Electrical and Computer Engineering, Waterloo, N2L3G5, Canada
J. Lai
Affiliation:
[email protected], University of Waterloo, Electrical and Computer Engineering, Waterloo, N2L3G5, Canada
D. Striakhilev
Affiliation:
[email protected], University of Waterloo, Electrical and Computer Engineering, Waterloo, N2L3G5, Canada
A. Nathan
Affiliation:
[email protected], University College London, London Centre for Nanotechnology, London, WC1H OAH, United Kingdom
G. Heiler
Affiliation:
[email protected], Eastman Kodak Company, Rochester, NY, 14650-23487, United States
T. Tredwell
Affiliation:
[email protected], Eastman Kodak Company, Rochester, NY, 14650-23487, United States
M. Fernandes
Affiliation:
[email protected], ISEL, Electronics Telecommunication and Computer Dept., Lisboa, N/A, Portugal
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Abstract

Because of the inherent desired material and technological attributes such as low temperature deposition and high uniformity over large area, the amorphous silicon (a-Si:H) technology has been extended to digital X-ray diagnostic imaging applications. This paper reports on design, fabrication, and characterization of a MIS-type photosensor that is fully process-compatible with the active matrix a-Si:H TFT backplane. We discuss the device operating principles, along with measurement results of the transient dark current, linearity and spectral response.

Keywords

amorphousphotovoltaicradiation effects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A12-06
Copyright
Copyright © Materials Research Society 2007

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References

1 Beutel, J., and Kundel, H. L., “Handbook of Medical Imaging”, SPIE Press, 2000.Google Scholar
2 Street, R. A. (Ed.), in Technology and Applications of Amorphous Silicon (Springer, Berlin, 2000) pp. 147–221.Google Scholar
3 Watanabe, M. et al. Proc. SPIE, 4320, 103 (2001).Google Scholar
4 Mochizuki, C., Patent US 6682960B1, Jan. 27, 2004.Google Scholar
5 Wright, M. D., Patent Application Publication US 2006/0001120 A1, Jan. 5, 2006.Google Scholar
6Kabayashi et al. Patent US 6245601B1, Jun. 12, 2001.Google Scholar
7 Wieczorek, H., J. Non-Cryst. Sol. 164-166, 781 (1993).Google Scholar
8 Powell, M.J., Appl. Phys. Lett. 43 (6), 15 (1983).Google Scholar