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Model of Porous Silicon Oxidation

Published online by Cambridge University Press:  28 February 2011

F. R. Ore  and
P. B. Harwood
F. R. Ore
Affiliation:
Sperry Corporation, Eagan, MN 55121
P. B. Harwood
Affiliation:
Sperry Corporation, Eagan, MN 55121
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Abstract

A two-dimensional model for simulating the growth of SiO2in a porous Si layer is described. The model makes use of rapid early oxidation based on the presence of micropores in the oxide normal to the growing oxide-oxidant inter- face. With initial pore shape, ambient pressure and oxidation temperature as inputs, the model predicts the final morphology of the grown oxide film and calculates the refractive index and other key indicators of oxide quality. The model is a first step towards allowing the design of optimized processes for formation of high-integrity oxidized porous Si layers.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 525
Copyright
Copyright © Materials Research Society 1986

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References

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