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A Model for Heterogeneous Nucleation and Growth of Silicon Nanoparticles on Silicon Dioxide from Disilane

Published online by Cambridge University Press:  15 March 2011

William T. Leach ,
Jian-Hong Zhu ,
John G. Ekerdt ,
Supika Mashiro ,
Junro Sakai  and
Takayuki Kawshima
William T. Leach
Affiliation:
Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas
Jian-Hong Zhu
Affiliation:
Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas
John G. Ekerdt
Affiliation:
Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas
Supika Mashiro
Affiliation:
Anelva Corporation, Tokyo, Japan
Junro Sakai
Affiliation:
Anelva Corporation, Tokyo, Japan
Takayuki Kawshima
Affiliation:
Anelva Corporation, Tokyo, Japan
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Abstract

A model is presented that describes silicon nanoparticle deposition in terms of disilane decomposition on silicon dioxide, adatom diffusion, nucleation, nanoparticle growth and coalescence. Total nanoparticle densities are output as a function of time, and segregation of nanoparticles into subsets with common size allows size distributions to be reported for all times during the simulation. Model parameters are fit to low pressure chemical vapor deposition data with disilane pressures ranging from 5×10−4 to 5×10−3 Torr and surface temperatures from 510 to 570 °C. Simulations are used to explain how growth pressure and surface temperature influence incubation time, nanoparticle density and size distribution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 686: Symposium A – Materials Issues in Novel Si-Based Technology , 2001 , A6.3
Copyright
Copyright © Materials Research Society 2002

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References

1. Tiwari, S., Rana, F., Hanafi, H., Hartstein, A., Crabbe, E. F., and Chan, K., Applied Physics Letters 68 (1995) 1377–1379.Google Scholar
2. Claassen, W.A.P. and Bloem, J., Semiconductor Silicon 81 (1981) 365–379.Google Scholar
3. Stowell, M.J., Journal of Crystal Growth 24/25 (1974) 45–52.Google Scholar
4. Lewis, B. and Campbell, D.S., The Journal of Vacuum Science and Technology 4 (1967) 209–218.Google Scholar
5. Walton, D., J. Chem. Phys. 37 (1962) 2182–2188.Google Scholar
6. Leach, W.T., Zhu, J., and Ekerdt, J.G., Submitted to the Journal of Crystal Growth (2001)Google Scholar
7. Zhu, J., Leach, W.T., and Ekerdt, J.G., Submitted to the Proceedings of the Materials Research Society W10.10 (2001)Google Scholar
8. Leach, W.T., Zhu, J., and Ekerdt, J.G., “Thermal desorption effects in chemical vapor deposition of silicon nanoparticles”, Work in Progress (2001)Google Scholar
9. Ferguson, B.A., Reeves, C.T., Safarik, D.J. and Mullins, C.B., Journal of Applied Physics 90 (2001) 4981.Google Scholar