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MOCVD of Wide Bandgap III-V Semiconductors by using Novel Precursors

Published online by Cambridge University Press:  26 February 2011

Kwok-L. Ho ,
Klavs F. Jensen ,
Scott A. Hanson ,
John F. Evans ,
David C. Boyd  and
Wayne L. Gladfelter
Kwok-L. Ho
Affiliation:
Department of Chemistry, University of Minnesota, Minneapolis, MN 55455.
Klavs F. Jensen
Affiliation:
Department of Chemistry, University of Minnesota, Minneapolis, MN 55455.
Scott A. Hanson
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139.
John F. Evans
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139.
David C. Boyd
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139.
Wayne L. Gladfelter
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139.
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Abstract

Thin films of aluminum nitride have been grown by metalorganic chemical vapor deposition (MOCVD) from diethylaluminum azide. Growth rates of AIN on Si(111) were monitored in-situ with laser interferometry. The growth rate was linear in the partial pressure of the reactant at high temperatures and sublinear at low temperatures. A simple surface reaction mechanism consistent with these observations has been proposed. Surface reaction kinetics and mechanism were further investigated by steady-state kinetic mass spectrometry. Parameters in the growth rate expression were determined by a nonlinear regression of growth rate data. A typical sample of AIN on B-plane sapphire showed a bandgap of about 5.2eV which was increased to 5.9eV upon annealing in nitrogen at atmosphere pressure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 605
Copyright
Copyright © Materials Research Society 1990

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References

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