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MOCVD of Very thin Films of Lead Lanthanum Titanate

Published online by Cambridge University Press:  10 February 2011

David B. Beach  and
Catherine E. Vallet
David B. Beach
Affiliation:
Chemical and Analytical Sciences Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6197, [email protected]
Catherine E. Vallet
Affiliation:
Chemical and Analytical Sciences Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6197, [email protected]
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Abstract

Films of lead lanthanum titanate were deposited using metal-organic chemical vapor deposition (MOCVD) at temperatures between 500 and 550°C in a hot-wall reactor. The precursors used were Pb(THD)2, La(THD)3, and Ti(THD)2(I-OPr)2where THD = 2,2,6,6-tetramethyl-3,5-heptanedionate, O2C11H19, and I-OPr = isopropoxide, OC3H7. The three precursors were delivered to the reactor using a single solution containing all three precursors dissolved in tetraglyme and the precursor solution was volatilized at 225°C. Films were deposited on Si and Si/Ti/Pt substrates, and characterized using Rutherford Backscattering Spectroscopy (RBS) and X-ray diffraction(XRD). Films deposited at 550°C had a composition which was close to that of the precursor solution while films deposited at 500°C were deficient in lanthanum. Even at 500°C, the desired perovskite phase is readily observed by XRD. Subsequent rapid thermal processing of the film deposited at 500°C showed an increase in the intensity of the X-ray lines, but did not change the width of these lines, implying that grain sizes had remained unchanged.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 415: Symposium BB – Metal-Organic Chemical Vapor Deposition of Electronic Ceramics II , 1995 , 225
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1. Kittel, C., Introduction to Solid State Physics, 5th ed.; (John Wiley & Sons, New York, 1976), pp. 399–432.Google Scholar
2. Haertling, G. H. and Land, C. E., J. Amer. Ceram. Soc. 54, 1 (1971).Google Scholar
3. Lee, J. J. and Dey, S. K., Ceramic Trans., 25, 235 (1992).Google Scholar
4. Beach, D. B., Laibowitz, R. B., Shaw, T. M., Grill, A. and Kane, W. F., Integr. Ferroelectrics, 7, 161 (1995).Google Scholar
5. Fox, G. F., Krupanidhi, S. B., More, K. L., and Allard, L. F., J. Mater. Res., 7, 3039 (1992).Google Scholar
6. Buskirk, P. C. Van, Roeder, J., Bilodeau, S., Pombrik, S., and Beratan, H., Integr. Ferroelectrics, 6, 141 (1995).Google Scholar
7. Gardiner, R. A., Buskrik, P. C. Van, and Kilin, P. S. Mat. Res. Soc. Proc., 335, 221, (1994).Google Scholar