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MOCVD OF SrS and SrS:Ce Thin Films for Eelctroluminescent Flat Panel displays

Published online by Cambridge University Press:  10 February 2011

John A. Samuels
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545.
David C. Smith
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545.
Kerry N. Siebein
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545.
Kenny Salazar
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545.
Richard T. Tuenge
Affiliation:
Planar Systems, Inc. Beaverton, OR 97006.
Christian F. Schaus
Affiliation:
Planar Systems, Inc. Beaverton, OR 97006.
Christopher N. King
Affiliation:
Planar Systems, Inc. Beaverton, OR 97006.
H. Le
Affiliation:
Oregon State University, Corvallis, OR 97331
J. Hitt
Affiliation:
Oregon State University, Corvallis, OR 97331
R. L. Thuemler
Affiliation:
Oregon State University, Corvallis, OR 97331
J. F. Wager
Affiliation:
Oregon State University, Corvallis, OR 97331
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Abstract

High quality SrS and SrS:Ce thin films were deposited from Sr(thd)2, Ce(thd)4 and H2S via a low pressure MOCVD process. Film characteristics were found to be insensitive to the presence of the cerium dopant in the concentration range investigated. Depositions were carried out for a wide temperature range (250–550° C). Deposition rates were found to be relatively insensitive for the temperature range investigated. The films produced were found to be highly crystalline at all temperatures investigated. Deposited material showed texturing as a function of substrate material and temperature. FWHM of the <111> reflections were found to have a 2Θ values of 0.15–0.18 deg. for all temperatures. RBS and AES shows stoichiometric 1:1 SrS with less than 2% carbon and oxygen contaminates. ERD indicates the films to have 1 – 2.5% hydrogen. Films doped with 0.019 – 0.043 atom – 250 volts.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

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