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MOCVD of Ir and IrO2 Thin Films for PZT Capacitors

Published online by Cambridge University Press:  21 March 2011

M. Shimizu ,
K. Kita ,
H. Fujisawa  and
H. Niu
M. Shimizu*
Affiliation:
Department of Electronics, Faculty of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo 671-2201, Japan
K. Kita
Affiliation:
Department of Electronics, Faculty of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo 671-2201, Japan
H. Fujisawa
Affiliation:
Department of Electronics, Faculty of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo 671-2201, Japan
H. Niu
Affiliation:
Department of Electronics, Faculty of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo 671-2201, Japan
*
*[email protected]
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Abstract

Ir films were prepared on SiO2/Si at 275-500°C by M°CVD (Metalorganic Chemical Vapor Deposition) using a new Ir precursor, Ir(EtCp)(cod) (iridium(ethylcyclopentadienyl) (1,5-cyclo°Ctadiene): Ir(C2H5C5H4)(1,5-C8H12). Ir films prepared at 275-300°C showed highly reflecting surfaces with Rrms roughness (root-mean-square roughness) of 1.4-10nm. At 500°C, Ir and IrO2 mixture-oriented films were grown. Ir films deposited at 300°C on patterned SiO2/Si substrates with aspect ratios of 0.3-2.0 showed good step coverage of 70-85%. Auger analysis revealed that Ir film had no incorporation of carbon and oxygen, and that Ir films performed well as a diffusion barrier in PZT/Ir/SiO2/Si structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC1.10.1
Copyright
Copyright © Materials Research Society 2001

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