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MOCVD of Ferroelectric Pb(Zr,Ti)O3 and (Pb,La)(Zr,Ti)O3 Thin Films for Memory Device Applications

Published online by Cambridge University Press:  15 February 2011

Masaru Shimizu  and
Tadashi Shiosaki
Masaru Shimizu
Affiliation:
Department of Electronics, Faculty of Engineering, Kyoto University Yoshida Honmachi, Sakyo-ku, Kyoto 606, Japan
Tadashi Shiosaki
Affiliation:
Department of Electronics, Faculty of Engineering, Kyoto University Yoshida Honmachi, Sakyo-ku, Kyoto 606, Japan
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Abstract

The advantages of MOCVD for the growth of Pb(Zr,Ti)O3 (PZT) and (Pb,La)(Zr,Ti)O3(PLZT) thin films were discussed, with emphasis on the controllability of film composition, crystalline structure and electrical properties. The possibilities of lowering the processing temperature and scaling up the process to commercial-based production were investigated. The preparation of PZT films and electrodes with a specific focus on improving the I-V and fatigue characteristics was also investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 295
Copyright
Copyright © Materials Research Society 1995

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References

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