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MOCVD growth of GaN on flat and misoriented A-plane sapphire substrates
Published online by Cambridge University Press: 21 March 2011
Abstract
We have grown high-quality GaN with smooth surface morphology on vicinal a-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The misorientation angles of vicinal a-plane sapphire substrates were changed systematically from 0° to 0.75°. Surface morphology and crystalline qualities are found to be very sensitive to misorientation angles of a-plane sapphire substrates and the misorientation angle was optimized to be 0.25°.
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- Copyright © Materials Research Society 2001