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MOCVD Growth of GaN on bulk AlN Substrates

Published online by Cambridge University Press:  10 February 2011

Hong-Qiang Lu ,
Ishwara B. Bhat ,
Byung-Chan Lee ,
Glen A. Slack  and
Leo J. Schowalter
Hong-Qiang Lu
Affiliation:
[email protected]
Ishwara B. Bhat
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute, Troy, NY 12180-3590.
Byung-Chan Lee
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute, Troy, NY 12180-3590.
Glen A. Slack
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute, Troy, NY 12180-3590.
Leo J. Schowalter
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute, Troy, NY 12180-3590.
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Abstract

In this paper, the growth of epitaxial GaN layers on c-plane and a-plane bulk AIN substrates by metalorganic vapor phase epitaxy is reported. The AlN boules were grown by the sublimationrecondensation technique. Single crystal GaN films grown on the c-plane orientation replicate the substrate orientation. However the surface of the epilayer had a high density of cross-hatch defect lines, presumably caused by mechanical polishing damage. The low temperature PL spectra of these films were dominated by exciton emission at 3.470 eV with a FWHM of 14 meV at 7 K. On the other hand, GaN grown on the a-plane orientation AlN was polycrystalline and the surface was rough with ridge-like facets. The PL from this film showed a dominate peak at 3.406 eV which may originate from defect-bound excitons. The quality of the GaN layers grown on these AIN bulk substrates appeared to be limited by the surface preparation method, which has not been optimized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 277
Copyright
Copyright © Materials Research Society 1998

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