Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-25T17:24:59.370Z Has data issue: false hasContentIssue false
  • English
  • Français

MOCVD Growth and Characterization of InNAs/GaAs Quantum Wells

Published online by Cambridge University Press:  11 February 2011

Abdel-Rahman A. El-Emawy ,
Noppadon Nuntawong ,
Hongjun Cao ,
Chiyu Liu ,
Huifang Xu  and
Marek Osiński
Abdel-Rahman A. El-Emawy
Affiliation:
Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106–4343, U.S.A.
Noppadon Nuntawong
Affiliation:
Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106–4343, U.S.A.
Hongjun Cao
Affiliation:
Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106–4343, U.S.A.
Chiyu Liu
Affiliation:
Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106–4343, U.S.A.
Huifang Xu
Affiliation:
Department of Earth and Planetary Sciences, University of New Mexico, Albuquerque, New Mexico 87131, U.S.A.
Marek Osiński
Affiliation:
Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106–4343, U.S.A.
Get access

Abstract

InNAs/GaAs multiple-quantum-wells were grown by MOCVD on (100) SI-GaAs substrates using trimethylindium, tertiarybutylarsine, and 95–97.5% of dimethylhydrazine (DMHy) in the vapor phase. The crystalline quality and solid phase composition were evaluated using highresolution x-ray diffraction analysis. Nitrogen content in InNAs wells was determined to be 28%. Electron energy loss spectroscopy was used to confirm the presence of nitrogen in quantum wells. Surface morphology was investigated by atomic force microscopy (AFM) and field emission microscopy (FEM).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M8.25
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Naoi, H., Shaw, D. M., Naoi, Y., Collins, G. J., and Sakai, S., J. Cryst. Growth 222, 511 (2001).Google Scholar
2. Kao, Y. C., Broekaert, T. P. E., Liu, H. Y., Tang, S., Ho, I. H., and Stringfellow, G. B., in III- Nitride, SiC and Diamond Materials for Electronic Devices/1996 (Gaskill, D. K., Brandt, C. D., and Nemanich, R. J., Eds.), San Francisco, CA, 8–12 April 1996, MRS Symp. Proc., 423, p. 335.Google Scholar
3. Sakai, S., Cheng, T. S., Foxon, T. C., Sugahara, T., Naoi, Y., and Naoi, H., J. Cryst. Growth 189–190, 471 (1998).Google Scholar
4. Beresford, R., Stevens, K. S., and Schwartzman, A. F., J. Vac. Sci. & Technol. B, 16, 1293 (1998).Google Scholar
5. Wang, J.-S. and Lin, H.-H., J. Vac. Sci. & Technol. B 17, 1997 (1999).Google Scholar
6. Wang, J.-S., Lin, H.-H., Song, L.-W., and Chen, G.-R., J. Vac. Sci. & Technol. B 19, 202 (2001).Google Scholar
7. Yang, T., Nakajima, S., and Sakai, S., Jpn. J. Appl. Phys., Pt. 2, 36, L320 (1997).Google Scholar
8. Tit, N. and Dharma-wardana, M. W. C., Appl. Phys. Lett. 76, 3576 (2000).Google Scholar
9. El-Emawy, A. A., Cao, H.–J., Zhmayev, E., Lee, J.-H., Zubia, D., and Osiniski, M., Phys. Stat. Sol. (b) 228, No. 1, 263–267(2001).Google Scholar
10. Ho, I.-H. and Stringfellow, G. B., J. Cryst. Growth 178, 1 (1997).Google Scholar