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Mobility-Lifetime Products in Glow Discharge and RF Sputter Deposited A-Si:H

Published online by Cambridge University Press:  16 February 2011

M. H. Farias ,
A. Roche ,
S. Z. Weisz ,
H. Jia ,
J. Shinar ,
Y. Lubianiker  and
I. Balberg
M. H. Farias
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras, PR 00931
A. Roche
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras, PR 00931
S. Z. Weisz
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras, PR 00931
H. Jia
Affiliation:
Ames Laboratory - USDOE and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011
J. Shinar
Affiliation:
Ames Laboratory - USDOE and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011
Y. Lubianiker
Affiliation:
Racah Institute of Physics, Hebrew University, Jerusalem, 91904, Israel
I. Balberg
Affiliation:
Racah Institute of Physics, Hebrew University, Jerusalem, 91904, Israel
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Abstract

A comparative study of the deposition temperature (Ts) dependence of the Mobility-lifetime (μτ) products of the charge carriers in glow-discharge and rf sputter-deposited a-Si:H is described and discussed. The Ts-dependence of the μτ's the majority carrier light-intensity exponents of the two types of films are strikingly similar. These observations lead to the conclusion that the structure of the recombination levels as well as the recombination processes are in accord with the “defect pool” Model, in contrast to previous suggestions. The differences between the two types of films thus appear to be limited to the differences in the concentrations of dangling bonds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 425
Copyright
Copyright © Materials Research Society 1994

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