Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-25T15:41:21.674Z Has data issue: false hasContentIssue false

Misfit Dislocations in Epitaxial Ni/Cu Bilayer and Cu/Ni/Cu Trilayer Thin Films

Published online by Cambridge University Press:  18 March 2011

Tadashi Yamamoto
Affiliation:
MST-8, Materials Science and Technology Division Los Alamos National Laboratory, Los Alamos, NM
Amit Misra
Affiliation:
MST-8, Materials Science and Technology Division Los Alamos National Laboratory, Los Alamos, NM
Richard G. Hoagland
Affiliation:
MST-8, Materials Science and Technology Division Los Alamos National Laboratory, Los Alamos, NM
Mike Nastasi
Affiliation:
MST-8, Materials Science and Technology Division Los Alamos National Laboratory, Los Alamos, NM
Harriet Kung
Affiliation:
MST-8, Materials Science and Technology Division Los Alamos National Laboratory, Los Alamos, NM
John P. Hirth
Affiliation:
MST-8, Materials Science and Technology Division Los Alamos National Laboratory, Los Alamos, NM
Get access

Abstract

Misfit dislocations at the interfaces of bilayer (Ni/Cu) and trilayer (Cu/Ni/Cu) thin films were examined by plan-view transmission electron microscopy (TEM). In the bilayers, the spacing of misfit dislocations was measured as a function of Ni layer thickness. The critical thickness, at which misfit dislocations start to appear with the loss of coherency, was found to be between 2 and 5 nm. The spacing of the misfit dislocations decreased with increasing Ni layer thickness and reached a plateau at the thickness of 30 nm. The minimum spacing is observed to be about 20 nm. A g·b analysis of the cross-grid of misfit dislocations revealed 90° Lomer dislocations of the <110>{001} type lying in the (001) interface plane at a relatively large thickness of the Ni layer, but 60° glide dislocations of the <110>{111} type at a relatively small thickness of the Ni layer. In the trilayers, misfit dislocations formed at both interfaces. The spacing of the misfit dislocation is in agreement with that of the bilayers with a similar Ni layer thickness. The misfit dislocation arrays at the two interfaces, having the same line directions, are 60° dislocations with edge components with opposite signs but are displaced with respect to each other in the two different interface planes. This suggests that interactions of the strain fields of the dislocations have a strong influence on their positions at the interface.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Frank, F.C. and Merwe, J.H. van der, Proc. Roy. Soc. (London), A198, 216 (1949).Google Scholar
2. Matthews, J.W. and Blakeslee, A.E., J. Cryst. Growth, 27, 118 (1974).Google Scholar
3. People, R. and Bean, J.C., Appl. Phys. Lett., 47, 323 (1985).Google Scholar
4. Hull, R. and Bean, J.C., J. Vac. Sci. Technol., A7, 2580 (1989).Google Scholar
5. Petruzzello, J., Greenberg, B.L., Cammack, D.A., and Dalby, R., J. Appl. Phys.,63,2299 (1988).Google Scholar
6. Ahearn, J.S. and Laird, C., J. Mater. Sci., 12, 699 (1977).Google Scholar
7. Gossman, H.-J., Davidson, B.A., Gualtieri, G.J., Schwatz, G.P., Macrander, A.T., Slusky, S.E., Grabow, M.H., and Sunder, W.A., J. Appl. Phys., 66, 1687 (1989).Google Scholar
8. Narayan, J., Sharan, S., Srivasta, A.R., and Nandedkar, A.S., B1, 105 (1988).Google Scholar
9. Matthews, J.W., Thin Solid Films, 5, 369 (1970).Google Scholar
10. Matthews, J.W. and Crawford, J.L., Thin Solid Films, 5, 187 (1970).Google Scholar
11. Shinohara, K. and Hirth, J.P., Thin Solid Films, 16, 345 (1973).Google Scholar
12. Embury, J.D. and Hirth, J.P., Acta. Metall. Mater., 42, 2051 (1994).Google Scholar
13. Matthews, J.W., J. Vac. Sci. Tech., 3, 133 (1966).Google Scholar
14. Mattox, D.M., Handbook of Physical Vapor Deposition (PVD) Processing, (Noyes Publications, New Jersey, 1998), p. 482.Google Scholar
15. Matthews, J.W. and Jesser, W.A., Acta. Metall., 15, 595 (1967).Google Scholar
16. Hirth, J.P. and Feng, X., J. Appl. Phys., 67, 3343 (1990).Google Scholar
17. Feng, X. and Hirth, J.P., J. Appl. Phys., 72, 1386 (1992).Google Scholar