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Misfit Dislocations in Epitaxial Layers of SI on Gap (001) Substrates

Published online by Cambridge University Press:  26 February 2011

M. P. A. Viegers ,
C. W. T. Bulle Lieuwma ,
P. C. Zalm  and
P. M. J. Maree
M. P. A. Viegers
Affiliation:
Philips Research Laboratories, P.O. Box 80.000, 5600 JA Eindhoven, The Netherlands.
C. W. T. Bulle Lieuwma
Affiliation:
Philips Research Laboratories, P.O. Box 80.000, 5600 JA Eindhoven, The Netherlands.
P. C. Zalm
Affiliation:
Philips Research Laboratories, P.O. Box 80.000, 5600 JA Eindhoven, The Netherlands.
P. M. J. Maree
Affiliation:
FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
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Abstract

Misfit dislocations in epitaxial layers of Si grown by MBE at 570°C on GaP(001) substrates have been studied by TEM. It is found that layers as thick as 500 Å at least reside coherently on the substrate without misfit dislocations. In 1000 Å layers of Si the misfit strain is accommodated in part by 60-degree type dislocations with their Burgers vector inclined with respect to the interface, and by stacking faults intersecting the Si layer. The dislocations are dissociated into 30- and 90-degree Shockley partial dislocations. It is shown that in the case of a biaxial strain field, which is tensile in a (001)-plane, the 90-degree partial must be nucleated first. Only then can the 30-degree partial follow on the same glide plane. This geometrical effect explains the presence of dislocations as well as stacking faults in the Si layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 37: Symposium D – Layered Structures, Epitaxy, and Interfaces , 1984 , 331
Copyright
Copyright © Materials Research Society 1985

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References

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