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Misfit Dislocations at Mismatched Epitactic Heterojunctions

Published online by Cambridge University Press:  28 February 2011

Jane G. Zhu ,
C. Barry Carter  and
Chris J. Palmstrom
Jane G. Zhu
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
C. Barry Carter
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Chris J. Palmstrom
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701
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Abstract

The formation and structures of misfit dislocations are significant factors in understanding heteroepitaxy of lattice-mismatched materials. In this study, GaAs/Si, CoGa/GaAs and ErAs/GaAs heterojunctions in materials grown by molecular-beam epitaxy have been characterized using transmission electron microscopy. Different types of misfit dislocations have been generated at these interfaces. The different dislocation configurations are discussed, along with interactions between 60° and 90° dislocations in GaAs/Si heterojunctions; the 60° dislocations might be associated with surface steps or edges of islands. The growth of antiphase boundary structures in the CoGa and ErAs grown on GaAs are proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 171
Copyright
Copyright © Materials Research Society 1990

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References

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