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Migration-Enhanced Molecular Beam Epitaxial Growth and Characterization of GaAs on Si Substrates

Published online by Cambridge University Press:  26 February 2011

J.H. Kim ,
S. Sakai ,
J.K. Liu ,
G. Raohakrishnan ,
S.S. Chang ,
J. Katz  and
N.A. El-Masry
J.H. Kim
Affiliation:
Jet Propulsion Laboratory, Photonic Devices Group, California Institute of Technology, Pasadena, California 91109
S. Sakai
Affiliation:
Electrical Engineering, The University of Florida, Gainesville, FL 32611
J.K. Liu
Affiliation:
Jet Propulsion Laboratory, Photonic Devices Group, California Institute of Technology, Pasadena, California 91109
G. Raohakrishnan
Affiliation:
Jet Propulsion Laboratory, Photonic Devices Group, California Institute of Technology, Pasadena, California 91109
S.S. Chang
Affiliation:
Electrical Engineering, The University of Florida, Gainesville, FL 32611
J. Katz
Affiliation:
Jet Propulsion Laboratory, Photonic Devices Group, California Institute of Technology, Pasadena, California 91109
N.A. El-Masry
Affiliation:
Materials Science   Engineering, N.C. State University, Raleigh, NC 27695
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Abstract

We first report on migration-enhanced molecular beam epitaxial (MEMBE) growth and characterization of the GaAs layers on Si substrates (GaAs/Si). Excellent surface morphology GaAs layers were successfully grown on (100) Sisubstrates misoriented 4 toward [110] direction. The MEMBE growth method isdescribed and material properties are compared with those of normal two-step MBE-grown or in-situ annealed layers. Micrographs of cross-sectional view transmission electron microscopy (TEM) and scanning surface electron microscopy (SEM) of MEMBE-grown GaAs/Si showed dislocation densities of 107 cm-2 over ten times lower than those of two-step MBE-grown or in-situ annealedlayers. AlGaAs/GaAs double heterostructure lasers and light-emitting diodeshave been successfully grown on MEMBE GaAs/Si by both metal organic chemical vapor deposition and liquid phase epitaxy. MOCVD-grown lasers showed peak output power as high as 184 mW/facet, pulsed threshold currents as low as150 mA at 300 K, and differential quantum efficiencies of up to 30 %. The LPE-grown light-emitting diodes showed output powers of 1.5 mW and external quantum efficiencies of 3.3 mW/A per facet.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 279
Copyright
Copyright © Materials Research Society 1989

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References

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