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Microwave Transient Photoconductivity Studies in Porous Semiconductors

Published online by Cambridge University Press:  17 March 2011

Horia-Eugen Porteanu ,
Elisaveta Konstantinova ,
Vladimir Kytin ,
Oleg Loginenko ,
Victor Timoshenko ,
Thomas Dittrich ,
Frederick Koch  and
T.U. München
Horia-Eugen Porteanu
Affiliation:
Physik-Department E16, Garching, GERMANY
Elisaveta Konstantinova
Affiliation:
perm. address: Lomonosov Moscow State University, Moscow, RUSSIA.
Vladimir Kytin
Affiliation:
perm. address: Lomonosov Moscow State University, Moscow, RUSSIA.
Oleg Loginenko
Affiliation:
Physik-Department E16, Garching, GERMANY
Victor Timoshenko
Affiliation:
perm. address: Lomonosov Moscow State University, Moscow, RUSSIA.
Thomas Dittrich
Affiliation:
Physik-Department E16, Garching, GERMANY
Frederick Koch
Affiliation:
Physik-Department E16, Garching, GERMANY
T.U. München
Affiliation:
Physik-Department E16, Garching, GERMANY
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Abstract

The dynamics of the photogenerated carriers in porous silicon and TiO2 anatase was studied at 35 GHz by measuring the change in time of the conductivity s and dielectric constanter. Localization of carriers leads to a positive change ofer, while quasifree carriers to a negative change. Size reduction in Si shortens the recombination time as long as the surface traps are not significant. Magnetic field investigations show opposite variation of conductivity in poroussilicon compared with TiO2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 699: Symposium R – Electrically Based Microstructural Characterization III , 2001 , R4.8
Copyright
Copyright © Materials Research Society 2002

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References

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