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Microwave Responce from La- and Dy- doped BiFeO3 Thin Films

Published online by Cambridge University Press:  26 February 2011

Peter Kr. Petrov
Affiliation:
[email protected], London South Bank University, Centre for Physical Electronics and Materials, 103 Borough Road, London, SE1 0AA, United Kingdom, +442078157540
Vaijayanti R Palkar
Affiliation:
[email protected], Tata Institute of Fundamental Reasearch, Mumbai, 400005, India
Neil McN Alford
Affiliation:
[email protected], London South Bank University, London, SE1 0AA, United Kingdom
Alexander K Tagantsev
Affiliation:
[email protected], EPFL, Lausanne, CH-1015, Switzerland
K Prashanthi
Affiliation:
[email protected], Indian Institute of Technology Bombay, Mumbai, 400076, India
Hsin-I Chien
Affiliation:
[email protected], London South Bank University, London, SE1 0AA, United Kingdom
Anna-Karin Axelsson
Affiliation:
[email protected], London South Bank University, London, SE1 0AA, United Kingdom
S Bhattacharya
Affiliation:
[email protected], Tata Institute of Fundamental Reasearch, Mumbai, 400005, India
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Abstract

The dielectric response of La- and Dy- doped BiFeO3 thin films to electric- and magnetic fields was measured at microwave frequencies (up to 12GHz) in a temperature range from 25 °C to 300 °C. Interesting phenomena were observed. Significant oscillations in the C(f) characteristic which were unaffected by the electric field or by elevated temperature but which were dampened by a magnetic field. We also observed ‘N’-type I-V characteristics. A possible explanation for this mesoscopic response is the presence of structural features that cause resonance (e.g. grains, grain-boundaries, domains, domain walls etc), with a contribution strong enough to be averaged by the system. The exact origin of these features is unknown at present.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

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