Hostname: page-component-cd9895bd7-jkksz Total loading time: 0 Render date: 2024-12-27T01:39:08.004Z Has data issue: false hasContentIssue false
  • English
  • Français

Microwave Evidence for a Size-Induced Metal-Insulator Transition in Mesoscopic Conductors

Published online by Cambridge University Press:  21 February 2011

P. Marquardt ,
G. Nimtz ,
G. Heite  and
H. Peters
P. Marquardt
Affiliation:
II. Physikalisches Institut der Universität zu Kö1n, 5000 Kö1n 41
G. Nimtz
Affiliation:
II. Physikalisches Institut der Universität zu Kö1n, 5000 Kö1n 41
G. Heite
Affiliation:
AEG, D-7900 Ulm
H. Peters
Affiliation:
AEG, D-7900 Ulm
Get access

Abstract

Microwave investigations on sub-pm (“mesoscopic”) metal crystals revealed a size-induced metal-insulator transition (SIMIT). The microwaves were applied to determine the sizedependent quasi-static conductivity of metal crystals dispersed in an insulating matrix. Choosing an indium colloid for a model system allowed an in-situ particle size variation from 10 nm up to about 1μm. The experiments were carried out in a microwave bridge at 10 GHz, a frequency where the oscillation time is much longer than the elastic scattering time of electrons in a metal (quasi-static limit). The conductivity of metal crystals was found to decrease approximately with their volumes in the above size range. The 3-dimensional confinement of the electron wave packets gives rise to quantum-mechanical interference effects leading to the SIMIT as the crystals become smaller than 1μm. Experimental details and results including the sizeaffected temperature dependence of the conductivity are presented. The universal significance of the SIMIT and its consequences for the engineering of novel materials and the ultimate size-reduction in microelectronic devices are discussed as well.,

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 124: Symposium M – Microwave Processing of Materials I , 1988 , 155
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nimtz, G., Dornhaus, R., Schifferdecker, M., Shih, I., and Tyssen, E., J. Phys. E 11, 1109 (1978)CrossRefGoogle Scholar
2. For a classical review see e.g. van Beek, L.K.H., Progr. in Dielectrics 7, 69 (1967)Google Scholar
3. Marquardt, P. and Nimtz, G., Phys. Rev. Lett. 57, 1036 (1986)CrossRefGoogle Scholar
4. Looyenga, H., Physica (Utrecht) 31, 401 (1965)CrossRefGoogle Scholar
5. Marquardt, P., Phys. Lett. A 123, 365 (1987)CrossRefGoogle Scholar
6. Marquardt, P., Nimtz, G., and Mfihlschlegel, B., Sol. State Commun. 65, 539 (1988)CrossRefGoogle Scholar
7. Marquardt, P. and Nimtz, G., Semicond. Sci. Technol. 2, 833 (1987)CrossRefGoogle Scholar
8. Kubo, R., J. Phys. Soc. Japan 17, 975 (1962)CrossRefGoogle Scholar
9. Porter, S.G., Ferroelectrics 33, 196 (1981)CrossRefGoogle Scholar