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Microwave Annealing of Ion Implanted 6H-SiC

Published online by Cambridge University Press:  10 February 2011

J. A. Gardner ,
M. V. Rao ,
Y. L. Tian ,
O. W. Holland ,
G. Kelner ,
J. A. Freitas Jr  and
I. AIMAD
J. A. Gardner
Affiliation:
ECE Department, George Mason University, Fairfax, Virginia 22030
M. V. Rao
Affiliation:
ECE Department, George Mason University, Fairfax, Virginia 22030
Y. L. Tian
Affiliation:
ECE Department, George Mason University, Fairfax, Virginia 22030
O. W. Holland
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831
G. Kelner
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
J. A. Freitas Jr
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
I. AIMAD
Affiliation:
FM Technologies Inc., Fairfax, Virginia, 22032
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Abstract

Microwave rapid thermal annealing has been utilized to remove the lattice damage caused by nitrogen (N) ion-implantation as well as to activate the dopant in 6H-SiC. Samples were annealed at temperatures as high as 1400 °C, for 10 min. Van der Pauw Hall measurements indicate an implant activation of 36%, which is similar to the value obtained for the conventional furnace annealing at 1600 °C. Good lattice quality restoration was observed in the Rutherford backscattering and photoluminescence spectra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 430: Symposium O – Microwave Processing of Materials V , 1996 , 641
Copyright
Copyright © Materials Research Society 1996

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References

1. Davis, R.F., Kelner, G., Shur, M., Palmour, J.W., and Edmond, J.A., proc. IEEE 79, p. 677 (1991).Google Scholar
2. Ghandhi, S.K., VLSI Fabrication Principles, John Wiley, New York, 1994, pp. 368–406.Google Scholar
3. Gardner, J., Rao, M.V., Holland, O.W., Kelner, G., Simons, D.S., Chi, P.H., Andrews, J.M., Kretchmer, J. and Ghezzo, M., J. Electron. Mater. 25, May 1996 issue and the references therein.Google Scholar
4. Splinter, M. R., Palys, R. F., and Beguwala, M. M., Low Temperature Microwave Annealing of Semiconductor Devices, United States Patent, # 4,303,455, Dec. 1, 1981.Google Scholar
5. Scovell, P. D., Method of Reactivating Implanted Dopants and Oxidation Semiconductor Wafers by Microwaves, United States Patent # 4,490,183, Dec. 25, 1984.Google Scholar
6. Zhang, S.L., Buchta, R., and Sigurd, D., Thin Solid Films 246, p. 151 (1994).Google Scholar
7. Fukano, T., Ito, T., and Ishikawa, H., Microwave Annealing for Low Temperature VLSI processing, IEDM Tech. Digest, p. 224 (1985).Google Scholar
8. Amada, H., Method and Apparatus for Microwave Heat-Treatment of a Semiconductor Wafer, United States Patent # 4,667,076, May 19, 1987.Google Scholar
9. Rao, M.V., Griffiths, P., Holland, O.W., Kelner, G., Freitas, J.A. Jr, Simons, D.S., Chi, P.H., and Ghezzo, M., J. Appl. Phys. 77, p. 2479 (1995).Google Scholar