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Microstructures of GaN and InxGa1-xN Films Grown by MOCVD on freestanding GaN Templates

Published online by Cambridge University Press:  01 February 2011

J. Jasinski ,
Z. Liliental-Weber ,
D. Huang ,
M. A. Reshchikov ,
F. Yun ,
H. Morkoç ,
C. Sone ,
S. S. Park  and
K. Y. Lee
J. Jasinski
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
Z. Liliental-Weber
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
D. Huang
Affiliation:
Virginia Commonwealth University, Richmond, VA, USA
M. A. Reshchikov
Affiliation:
Virginia Commonwealth University, Richmond, VA, USA
F. Yun
Affiliation:
Virginia Commonwealth University, Richmond, VA, USA
H. Morkoç
Affiliation:
Virginia Commonwealth University, Richmond, VA, USA
C. Sone
Affiliation:
Samsung Advanced Institute of Technology, P.O.Box 111, Suwon, KOREA
S. S. Park
Affiliation:
Samsung Advanced Institute of Technology, P.O.Box 111, Suwon, KOREA
K. Y. Lee
Affiliation:
Samsung Advanced Institute of Technology, P.O.Box 111, Suwon, KOREA
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Abstract

We summarize structural properties of thick HVPE GaN templates from the point of view of their application as substrates for growth of nitride layers. This is followed by the results of optical and structural studies, mostly transmission electron microscopy, of nitride layers grown by MOCVD on top of the HVPE substrates. The results indicate high structural quality of these layers with a low density of threading dislocations (in the range of 106 cm-2). Convergent beam electron diffraction studies showed that the MOCVD GaN films have Ga-polarity, the same polarity as the HVPE GaN substrates. Structural studies of an InGaN layer grown on top of the MOCVD GaN film showed the presence of two layers, which differed in lattice parameter and composition. The upper layer, on the top of the structure had a clattice parameter about 2 % larger than that of GaN and contained 10.3 ± 0.8 % of In. Values measured for the thinner, intermediate layer adjacent to the GaN layer were about 2.5 times lower.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 722: Symposia K/L – Materials and Devices for Optoelectronics and Photonics – Photonic Crystals-From Materials to Devices , 2002 , K3.1
Copyright
Copyright © Materials Research Society 2002

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