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Microstructure of GaN Grown on (1120) Sapphire

Published online by Cambridge University Press:  17 March 2011

P. Ruterana ,
A. E. Wickenden ,
M. E. Twigg ,
D.D. Koleske ,
R. L. Henry  and
O. Tottereau
P. Ruterana*
Affiliation:
ESCTM, ISMRA, 6 Bd Maréchal Juin, 14050 Caen
A. E. Wickenden
Affiliation:
Electronics Science and Technology Division, Naval Research Laboratory, Washington, D.C20375-5320, USA
M. E. Twigg
Affiliation:
Electronics Science and Technology Division, Naval Research Laboratory, Washington, D.C20375-5320, USA
D.D. Koleske
Affiliation:
Electronics Science and Technology Division, Naval Research Laboratory, Washington, D.C20375-5320, USA
R. L. Henry
Affiliation:
Electronics Science and Technology Division, Naval Research Laboratory, Washington, D.C20375-5320, USA
O. Tottereau
Affiliation:
CRHEA – CNRS, rue Bernard Gregory Sophia- Antipolis, Valbonne, 06560, France, France
*
Author for correspondence: Tel 33 2 31 45 26 53 Fax 33 2 31 45 26 60 email [email protected]
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Abstract

Most of the work done on GaN has taken into account layers grown on the (0001) sapphire. However one would expect the growth on (1120) to lead to different structural defects. As has been shown, in one direction, the mismatch is rather small. In this work, we have carried out structural analysis of layers and interfacial relationship. Inside the layers, the density of defects is comparable to that found conventionally in layers grown on top of (0001) sapphire. The growth mode is also mosaic with a grain size of a few microns. One interesting result is the interface structure, which differs from conventional growth where a flat or stepped interface is formed with a large distance between steps. In this case, the interface is found to be rough at the atomic scale so that this roughness has a random distribution. Moreover, the misfit dislocation spacing is 1nm which is only half the dislocation spacing found in GaN growth on (0001) sapphire.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G3.9
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Nakamura, S., Senoh, M., and Mukai, T., Appl. Phys. Lett., 64, 1687(1994)Google Scholar
2. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., Sugimoto, Y., Jpn. J. Appl. Phys. 35, L74 (1996)Google Scholar
3. Mohammad, S.N., Salvador, A., and Morkoc, H., Proc. IEEE 83, 1306(1995)Google Scholar
4. Bulman, G.E., Doverspike, K., and Schetzina, J.F. J. Electron. Lett. 33, 1556(1997)Google Scholar
5. Kirchner, C., Schwegler, V., and Porowski, S., Appl. Phys. Lett. 75, 1098(1999)Google Scholar
6. Vennegues, P., Beaumont, B., and Gibart, P., J. Appl. Phys. 87, 4175(2000)Google Scholar
7. Zheleva, T.S., Ashmawi, W.M., Jones, K.A., Phys. Stat. Sol. 176, 545(1999)Google Scholar
8. Koleske, D.D., Wickenden, A.E., Henry, R.L., DeSisto, W.J., and Norman, R.J., J. Appl. Phys. 84, 1998(1998)Google Scholar
9. Wickenden, A.E., Koleske, D.D., Henry, R.L., Norman, R.J., Culbertson, J. C., and Twigg, M.E., J. Electronic Mater. 28, 301(1999)Google Scholar
10. Fatemi, M., Wickenden, A.E., Koleske, D.D., Twigg, M.E., Freitas, J.A. Jr, Henry, R., and Norman, R.J., Appl. Phys. Lett. 73, 608(1998)Google Scholar
11. Dovidenko, K., Oktyabrsky, S., Narajan, J., and Razeghi, M. J. Appl. Phys. 79, 2439(1996)Google Scholar
12. Twigg, M.E., Henry, R.L., Wickenden, A.E., Koleske, D.D., Fatemi, M., and Culbertson, J.C. in Microscopy of Semiconducting Materials, ed. Cullis, A.G. and Beanland, R., I.O.P. Conf. Ser. 164, 367(1999)Google Scholar
13. Beanland, R., Kiely, C.J. and Pond, R.C. Handbook on Semiconductors, edited by Mahajan, S. (North Holland, Amsterdam), Vol. 3a, Chap. 15 (1994)Google Scholar
14. Ning, X.J., Chien, F.R., Pirouz, P., Yang, J.W. and Khan, M.A. Asif, J. Mater. Res. 11, 580(1996)Google Scholar