Hostname: page-component-cd9895bd7-7cvxr Total loading time: 0 Render date: 2024-12-27T18:18:10.061Z Has data issue: false hasContentIssue false
  • English
  • Français

Microstructure of GaN Films Grown by RF-Plasma Assisted Molecular Beam Epitaxy

Published online by Cambridge University Press:  17 March 2011

Philomela Komninou ,
Thomas Kehagias ,
Joseph Kioseoglou ,
Eirini Sarigiannidou ,
Theodoros Karakostas ,
Gerard Nouet ,
Pierre Ruterana ,
Khalid Amimer ,
Spyros Mikroulis  and
Alexandros Georgakilas
Philomela Komninou
Affiliation:
Physics Department, Aristotle University of Thessaloniki, Thessaloniki, GR-54006, Greece
Thomas Kehagias
Affiliation:
Physics Department, Aristotle University of Thessaloniki, Thessaloniki, GR-54006, Greece
Joseph Kioseoglou
Affiliation:
Physics Department, Aristotle University of Thessaloniki, Thessaloniki, GR-54006, Greece
Eirini Sarigiannidou
Affiliation:
Physics Department, Aristotle University of Thessaloniki, Thessaloniki, GR-54006, Greece
Theodoros Karakostas
Affiliation:
Physics Department, Aristotle University of Thessaloniki, Thessaloniki, GR-54006, Greece
Gerard Nouet
Affiliation:
ESCTM-CRISMAT, UMR6508-CNRS, ISMRA Caen Cedex, 6 boul. du Marechal Juin, 14050, France
Pierre Ruterana
Affiliation:
ESCTM-CRISMAT, UMR6508-CNRS, ISMRA Caen Cedex, 6 boul. du Marechal Juin, 14050, France
Khalid Amimer
Affiliation:
FORTH/IESL and Physics Department, University of Crete, Heraklion-Crete, P.O.Box 1527, 71110, Greece
Spyros Mikroulis
Affiliation:
FORTH/IESL and Physics Department, University of Crete, Heraklion-Crete, P.O.Box 1527, 71110, Greece
Alexandros Georgakilas
Affiliation:
FORTH/IESL and Physics Department, University of Crete, Heraklion-Crete, P.O.Box 1527, 71110, Greece
Get access

Abstract

The influence of the variation of the Ga/N flux ratio during deposition and of the different substrate nitridation temperatures on the microstructure of 2H-GaN films grown on (0001) sapphire, by RF plasma MBE, is investigated by conventional and high resolution Transmission Electron Microscopy (TEM-HREM). The different growth rates of the inverse polarity domains in Ga-rich and N-rich specimens result in film surfaces of different roughness, whereas the stacking fault (SF) content is significantly higher in samples grown under N-rich conditions. Low temperature nitridation of the substrate results in a low density of defects in GaN film. Cubic GaN “pockets”, near the substrate/GaN interface that are present in low temperature nitridated samples are not observed in high temperature nitridated samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G3.47
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nakamura, S., MRS Bull., 22, (2), 29 (1997).Google Scholar
2. Nakamura, S., Mukai, T., and Senoh, M., Appl. Phys. Lett., 84, 1687 (1994).Google Scholar
3. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsuhita, T., Kiyoku, H., and Sugimoto, Y., Jpn. J. Appl. Phys., 35, L74 (1996).Google Scholar
4. Lester, S.D., Ponce, F.A., Craford, M.G., Steigernald, D. A., Appl. Phys. Lett., 66, 1249 (1995).Google Scholar
5. Cherns, D., Ponce, F.A., Inst. Phys. Conf. ser. 157 (1997).Google Scholar
6. Hirth, J.P., Lothe, J., Theory of Dislocations, 2nd Ed, New York Wiley Intersciences, 345 (1982).Google Scholar
7. Vermaut, P., Ruterana, P., Nouet, G., Salvador, A., Morkoc, H., M. R. S. Inter. Jour.-Nitrid. Sem.R, 1, art.42 (1998).Google Scholar