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Microstructure Characterization of a-Si Based Alloys by Effusion of Implanted Helium

Published online by Cambridge University Press:  01 February 2011

Wolfhard Beyer  and
Friedhelm Finger
Wolfhard Beyer
Affiliation:
Institut für Photovoltaik (IPV), Forschungszentrum Jülich, D-52425 Jülich, Germany
Friedhelm Finger
Affiliation:
Institut für Photovoltaik (IPV), Forschungszentrum Jülich, D-52425 Jülich, Germany
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Abstract

The microstructure of amorphous alloys of silicon with oxygen, carbon, nitrogen and germanium is studied by effusion measurements of hydrogen and of implanted rare gases helium, neon, argon. The results suggest a general widening of network openings with increasing alloy concentration. Isolated voids disappear for wide bandgap alloys already at low alloy concentration of 5–10 at.% presumably because interconnected voids are formed. At an alloy concentration near 20–30 at.%, Ne and H2 become mobile at T < 500°C and at higher temperature/alloy concentration Ar becomes mobile, too. Void formation is mainly attributed to an increase in hydrogen incorporation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A5.1
Copyright
Copyright © Materials Research Society 2002

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