Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-29T07:34:15.928Z Has data issue: false hasContentIssue false
  • English
  • Français

Microstructure and Residual Stresses in Al2O3 Prepared by Ion Beam Assisted Deposition

Published online by Cambridge University Press:  22 February 2011

M. G. Goldiner ,
G. S. Was ,
L. J. Parfitt  and
J. W. Jones
M. G. Goldiner
Affiliation:
Department of Nuclear Engineering, University of Michigan, Ann Arbor, MI 48109
G. S. Was
Affiliation:
Department of Nuclear Engineering, University of Michigan, Ann Arbor, MI 48109
L. J. Parfitt
Affiliation:
Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109
J. W. Jones
Affiliation:
Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109
Get access

Abstract

Alumina films synthesized by ion beam assisted deposition (EBAD) were characterized in terms of their microstructure and residual stress. Normalized energy per deposited atom, En, ranged from 0 to 130 eV/atom. The microstructure of PVD films (En=0) is a mixture of crystalline (γ-Al2O3) and amorphous phases and IBAD films are amorphous. Density and stoichiometry vary between 2.6 and 3.1 g/cm3 and 1.3 and 1.6, respectively. Neither are dependent on either ion-to-atom arrival rate ratio, R, or En. The film porosity is in the form of small (4-6 nm) voids of density 1017 - 1018 cm-3. Bombarding gas is incorporated with 80% efficiency to levels of 4-5 at. %. A tensile residual stress of 0.3 GPa exists in PVD films. A rapid transition to high compressive stresses occurs with increased En, with a saturation of -0.4 GPa occurring at high En There is a strong correlation between gas incorporation and residual film stress. However, no existing models are capable of providing a quantitative explanation of the results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 941
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Doerner, M. F. and Nix, W. D., CRC Critical Reviews in Solid State and Materials Science 14 (1988) 224.Google Scholar
2 Smidt, F. A., Int. Materials Review 35 (1990) 61.Google Scholar
3 Rossnagel, S. M. and Cuomo, J. J., Thin Solid Films 171 (1989) 143.Google Scholar
4 Was, G. S., Jones, J. W., Parfitt, L. J., Kalnas, C. E., Hoffman, D. W., in Int. Conference on Beam Processing of Advanced Materials, edited by Singh, J. and Copley, S. M. (TMS, 1993) p. 489.Google Scholar
5 Krishna, M. C., Kanakaraju, S., Rao, K. N. and Mohan, S., Mat. Sci. Eng. B21 (1993) 10.Google Scholar
6 Dolitle, L. R., Nucl. Inst. Meth. B9 (1985) 334.Google Scholar
7 Guinier, A. and Fournet, G., Small Angle Scattering of X-rays (Willey, New York, 1955).Google Scholar
8 Finegan, J. D. and Hoffman, R. W., in Trans. 8th National Symposium (Pergamon Press, Elmsford, New York, 1961) p. 935.Google Scholar
9 Muller, K.-N., Netterfield, R. P. and Martin, P. J., Phys. Rev. B35 (1987) 2934.Google Scholar
10 Netterfield, R. P., Santy, W. G., Martin, P. J. and Appl. Opt. 24 (1985) 2267.Google Scholar
11 Jones, F., J. Vac. Sci. Techn. A6 (1988) 3088.Google Scholar
12 Kao, A. S. and Gorman, G. L., J. Appl. Phys. 67 (1990) 3826.Google Scholar
13 Davis, C. A., Thin Solid Films 226 (1993) 30.Google Scholar
14 Windischmann, H., J. Appl. Phys. 62 (1987)1800.Google Scholar