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Microstructure and Integrity of Thin Silicon Films on Sio2 after Immersion in 10:1 Buffered HF
Published online by Cambridge University Press: 01 January 1993
Abstract
The microstructure and integrity of thin silicon films on SiO2 after immersion in 10:1 buffered HF solution were investigated by AES, AFM and TEM measurements. Silicon films of 30 nm - 50 nm thicknesses were deposited on 15 nm of thermal oxide by LPCVD using SiH4 at 550 °C, 580 °C and 625 °C. These films were then treated with the HF for 15 seconds and characterized systematically. The data provided direct physical evidence for etching of gate oxide by the HF solution through defects (holes) in the 580 °C Si film.
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- Research Article
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- Copyright © Materials Research Society 1993
References
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