Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-29T07:50:25.006Z Has data issue: false hasContentIssue false
  • English
  • Français

Microstructure and Hydrogen Dynamics in a-Si1-xCx:H

Published online by Cambridge University Press:  15 February 2011

R. Shinar ,
J. Shinar ,
D. L. Williamson ,
S. Mitra ,
H. Kavak  and
V. L. Dalal
R. Shinar
Affiliation:
Microelectronics Research Center, Iowa State University, Ames, IA 50011 Microanalytical Instrumentation Center, Iowa State University, Ames, IA 50011
J. Shinar
Affiliation:
Ames Laboratory - USDOE and Department of Physics and Astronomy, Iowa State University, Ames, IA 50011
D. L. Williamson
Affiliation:
Department of Physics, Colorado School of Mines, Golden, CO 80401
S. Mitra
Affiliation:
Department of Engineering Physics, University of Tulsa, Tulsa, OK 74104
H. Kavak
Affiliation:
Microelectronics Research Center, Iowa State University, Ames, IA 50011 Physics Department, Cukurova University, 101330 Adana, Turkey
V. L. Dalal
Affiliation:
Microelectronics Research Center, Iowa State University, Ames, IA 50011
Get access

Abstract

Small angle x-ray scattering (SAXS), IR spectroscopy, and deuterium secondary ion mass spectrometry (DSIMS) were used to study the microstructure and hydrogen dynamics of undoped and boron-doped if-sputter-deposited (RFS) and electron cyclotron resonance (ECR)-deposited hydrogenated amorphous silicon carbides (a-Si1-xCx:H) with x ≤ 19 at.%. The SAXS measurements indicated residual columnar-like features and roughly spherical nanovoids of total content CnV ≤ 1.0 vol.%. The growth of CnV with annealing was due largely to an increase in the average nanovoid radius. It was noticeably smaller than in RFS a-Si:H films. The IR spectra demonstrated H transfer by annealing from mostly bulk-like Si-H groups to C-bonds. The H diffusion and its temperature dependence in undoped films resembled those of a-Si:H and were consistent with the SAXS and IR data. Suppression of long-range motion of most of the H atoms, consistent with increased CnV was observed in B-doped ECR films. However, a small fraction of the H atoms appeared to undergo fast diffusion, reminiscent of the fast diffusion in doped a-Si:H. The results are consistent with impeded relaxation processes of the Si network, caused by the presence of C atoms, and H trapping at C-H bonds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 329
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Williamson, D. L., Mat. Res. Soc. Symp. Proc. 377, 251 (1995).Google Scholar
2. Shinar, J., Jia, H., Shinar, R., Chen, Y., and Williamson, D. L., Phys. Rev. B 50, 7358 (1994).Google Scholar
3. Acco, S., Williamson, D. L., Stolk, P. A., Saris, F. W., Boogaard, M. J. van den, Sinke, W. C., Weg, W. F. wan der, Roorda, S., and Zalm, P. C., Phys. Rev. B 53, 4415 (1996).Google Scholar
4. Street, R. A., Tsai, C. C., Kakalios, J., and Jackson, W. B., Phil. Mag. B 56, 305 (1987).Google Scholar
5. Kakalios, J., Street, R. A., and Jackson, W. B., Phys. Rev. Lett. 59, 1037 (1987).Google Scholar
6. Shinar, J., Shinar, R., Mitra, S., and Kim, J.-Y., Phys. Rev. Lett. 62, 2001 (1989).Google Scholar
7. Tang, X.-M., Weber, J., Baer, Y., and Finger, F., Phys. Rev. B 41, 7945 (1990).Google Scholar
8. Shinar, R., Shinar, J., Jia, H., and Wu, X.-L., Phys. Rev. B 47, 9361 (1993).Google Scholar
9. Knox, R. D. et al., J. Vac. Sci. Tech. A 11, 1896 (1993).Google Scholar
10. Albers, M. L., Shinar, J., and Shanks, H. R., J. Appl. Phys. 64, 1859 (1988).Google Scholar
11. Cardona, M., Phys. Stat. Sol. B 118, 463 (1983).Google Scholar
12. Kemp, M. and Branz, H. M., Phys. Rev. B 52, 13946 (1995).Google Scholar