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The Micro-Structure and Electron Conduction Mechanism of Hydrogenated Nano-Crystalline Silicon Films

Published online by Cambridge University Press:  28 February 2011

Yuliang He
Affiliation:
The Amorphous Physics Research Laboratory, Beijing University of Aeronautics and Astronautics, Beijing 100083, P.R. China.
Yiming Chu
Affiliation:
Beijing Laboratory of Election Microscopy, Chinese Academy of Sciences, Beijing 100080, P.R. China.
Hongyi Lin
Affiliation:
Department of Electronic Engineering, Beijing Institute of Technology, Beijing 100081, P.R. China.
Guoguang Qin
Affiliation:
department of Physics, Peking University, Beijing 100871, P.R. China.
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Abstract

The hydrogenated nano-crystalline silicon (nc-Si:H) films have been deposited with PECVD method.1–2 The micro-structure of these films has been studied by TEM and HREM. The PECVD nc-Si:H films show fiber texture structure which is exceptional compared with the nano-size materials made by the method of compressing granules method. The fractal dimention of this texture structure has been calculated with a Fourier filtered image. The relationshisps between conductivity and temperature and micro-structure has also been studied and the mechanism of electron conduction is discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

1. He, Y., Yin, W., Tang, W. and Gong, T., Physics and Chemistry of Finite Systems: From Clusters to Crystals, edited by Jena, P., Khanna, S.N. and Rao, B.K., Vol. II, p. 1245(1992).Google Scholar
2. He, Yuliang, Liu, Hsiangna, Wang, Zhichao, Cheng, Guangxu, Wang, Luchun and Yu, Shidong, Science in China 35 (2), 255 (1993). (in English)Google Scholar
3. Gleiter, H., Prog, in Materials Science Vol 33, 223 (1989).Google Scholar
4. Veprek, S., Sarott, F.A., Phys. Rev. B, 36 (6), 333 (1987).Google Scholar
5. Cullis, A. G., Electron Microscopy, Vol. 2, European Elactron Microscopy Conference, Granada, Spain. 1992, pp. 7175.Google Scholar
6. Forrest, P. et al., J. Phys. A 12, LI09 (1979).Google Scholar
7. Wang, F., Liu, H.N., He, Y.L., Schweiger, A. and Schwarz, R., J. Non-Cryst. Solids 137 & 138, 511 (1991).Google Scholar
8. Wanguo, Tang, Tao, Gong, Ziyuan, Li, Hsiangna, Liu and Yuliang, He, Proc. of the 21st International Conference On The Physics Of Semiconductors (Beijing, China, Aug 1992) ThP-177.Google Scholar