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The Microstructure and Electromigration Performance of Damascene-Fabricated Aluminum Interconnects

Published online by Cambridge University Press:  10 February 2011

Paul R. Besser ,
John E. Sanchez Jr ,
David P. Field ,
Shekhar Pram Anick  and
Kashmir Sahota
Paul R. Besser
Affiliation:
Advanced Process Development, Advanced Micro Devices, Inc., Sunnyvale, CA
John E. Sanchez Jr
Affiliation:
Materials Science Department, University of Michigan, Ann Arbor, MI
David P. Field
Affiliation:
TexSEM Laboratories, Inc., Provo, UT
Shekhar Pram Anick
Affiliation:
Technology Reliability Development, Advanced Micro Devices, Sunnyvale, CA
Kashmir Sahota
Affiliation:
Advanced Process Development, Advanced Micro Devices, Inc., Sunnyvale, CA
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Abstract

Novel metal deposition stack and damascene processing methods have been used to fabricate electrically isolated parallel arrays of 1.0 νm deep aluminum-alloy interconnect trenches varying in width from 0.5 μm to 16 μm. The grain size and crystallographic texture of the Al in these trenches has been characterized using transmission electron microscopy (TEM) and local electron backscattered diffraction (EBSD), respectively. Narrow lines (0.5 and 1.0 μm wide) have a bamboo microstructure, intermediate widths (2.0 μm wide) are nearly bamboo, and wide lines (4.0 μm and wider) are polycrystalline. The <111> texture of the lines degrades with decreasing linewidth. A secondary <100> component is demonstrated and its origin proposed. The electromigration reliability of the narrow damascene Al lines was measured, and the observed enhancement of damascene Al interconnects compared to conventionally-fabricated Al interconnects is correlated with the microstructure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 472: Symposium I – Polycrystalline Thin Films - Structure, Texture, Properties..III , 1997 , 313
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Kikuta, K., Nakajima, T., Ueno, K., and Kikkawa, T., IEEE Proc. IEDM, p. 285 (1993).Google Scholar
2. Kaanta, C., Bombaardier, S., Cote, W., Hill, W., Kerszykowski, G., Landis, H., Poindexter, D., Pollard, G, Ross, G., Ryan, J., Wolff, S., Cronin, J., Proc. VLSI Multilevel Interconnects Conference, p. 144 (1991).Google Scholar
3. Licata, T., Okazaki, M., Ronay, M., Landers, W., Ohiwa, T., Powtzlberger, H., Aochi, H., Dobuzinsky, D., Filippi, R., Restaino, D., Knorr, D., and Ryan, J., Proc. VLSI Multilevel Interconnects Conference, p. 596 (1995).Google Scholar
4. Xu, Z., Kieu, H., Yao, T., and Raaijmakers, I.J., Proc. VLSI Multilevel Interconnection Conf., p. 158 (1994).Google Scholar
5. Chiang, E.J.H., Wang, K.C., Lee, D., Carmody, J., Hofman, V., and Helms, H. Jr, Proc. VLSI Multilevel Interconnection Conf., p. 201 (1994).Google Scholar
6. Zhao, B., Ta, O., and Ting, C.H., Conf. Proc. 1994 ULSI-X of Advanced Metallization for ULSI Applications, p. 511 (1995).Google Scholar
7. Besser, P. R., Sanchez, J.E., and Field, D.P., To be published in Proc. Advanced Metallization and Interconnect Systems for ULSI Appl in 1996 (October, 1996).Google Scholar
8. Randle, V., Microtexture Determination and its Applications, Inst. of Metals (1992).Google Scholar
9. Rodbell, K.P., Hurd, J., and DeHaven, P., Mat. Res. Soc. Symp. Proc. 403 (1996).Google Scholar
10. Field, D.P. and Dingley, D.J., Solid State Technology, 38(11), p. 41 (1995).Google Scholar
11. Venables, J.A. and Harland, C.J., Phil. Mag. 27, p. 1193 (1973).Google Scholar
12. Dingley, D.J. and Baba-Kishi, K., Scanning Electron Microscopy, II, p. 383 (1986).Google Scholar
13. Knorr, D.B., Rodbell, K.P., and Tracy, D.P., Mat. Res. Soc. Symp. Proc. 225, p. 21 (1991).Google Scholar
14. Knorr, D.B., Mat. Res. Soc. Symp. Proc. 309, p. 75 (1991).Google Scholar
15. Thompson, C.V., Ann. Rev. Materials Sci. 20, p. 245 (1990).Google Scholar
16. Foilies, S.M., Baskes, M.I., and Daw, M.S., Phys. Rev. B 33, p. 7983 (1986).Google Scholar
17. McLean, M. and Gale, B., Phil. Mag. 20, p. 1033 (1969).Google Scholar
18. Vaidya, S. and Sinha, A.K., Thin Solid films 75, p. 253 (1981).Google Scholar
19. Vaidya, S., Sheng, T., and Sinha, A.K., Appl. Phys. Lett. 36(6), p. 464 (1980).Google Scholar