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Microstructure and Electrical Properties of Very Thin Pzt Films Deposited by In-Situ Ion Beam Sputtering.

Published online by Cambridge University Press:  25 February 2011

Ken D. Gifford ,
H.N. Al-Shareef ,
S.H. Rou ,
P.D. Hren ,
O. Auciello  and
A.I. Kingon
Ken D. Gifford
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
H.N. Al-Shareef
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
S.H. Rou
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
P.D. Hren
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
O. Auciello
Affiliation:
Microelectronics Center of North Carolina, Research Triangle Park, NC 27709
A.I. Kingon
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
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Abstract

PZT films < 700Å have been synthesized by in-situ ion beam sputter deposition on Pt/Ti/MgO and RuO2/SiO2/Si substrates using deposition temperatures ≤ 500°C. Films on Pt/Ti/MgO had a highly preferred (001) orientation, whereas, the films on RuO2/SiO2/Si were randomly oriented. The formation of perovskite vs. pyrochlore phases has been studied. In the case of heavily Sn doped samples, it appeared that the doping promoted the nucleation of pyrochlore. We believe this effect was caused by a substantial reduction in the A:B cation ratio which was the result of Sn contaminated Pb targets. Electrical characterization was performed using parallel-plate electrodes. Hysteresis measurements showed high polarization values and coercive fields for the highly oriented films, whereas, the randomly oriented films showed much lower values of polarization. Fatigue measurements on the highly oriented films showed a sharp drop in polarization at 105 or 106 cycles. A decrease in Pr with time has been observed and is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 243: Symposium G – Ferroelectric Thin Films II , 1991 , 191
Copyright
Copyright © Materials Research Society 1992

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References

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