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Microstructure Analysis of Thermally Stable Ohmic Contact to Both n and p+-GaAs

Published online by Cambridge University Press:  25 February 2011

W. Y. Han ,
H. S. Lee ,
Y. Lu ,
M. W. Cole ,
L. M. Casas ,
A. DeAnni ,
K. A. Jones  and
L. W. Yang
W. Y. Han
Affiliation:
Department of Electrical and Computer Engineering, Rutgers University, Piscataway, New Jersey 08855–0909
H. S. Lee
Affiliation:
Electronics Technology and Device Laboratory, U. S.Army, Fort Monmouth, New Jersey 07703–0500
Y. Lu
Affiliation:
Department of Electrical and Computer Engineering, Rutgers University, Piscataway, New Jersey 08855–0909
M. W. Cole
Affiliation:
Electronics Technology and Device Laboratory, U. S.Army, Fort Monmouth, New Jersey 07703–0500
L. M. Casas
Affiliation:
Electronics Technology and Device Laboratory, U. S.Army, Fort Monmouth, New Jersey 07703–0500
A. DeAnni
Affiliation:
Electronics Technology and Device Laboratory, U. S.Army, Fort Monmouth, New Jersey 07703–0500
K. A. Jones
Affiliation:
Electronics Technology and Device Laboratory, U. S.Army, Fort Monmouth, New Jersey 07703–0500
L. W. Yang
Affiliation:
Ford Microelectronics, Inc., 9965 Federal Drive, Colorado Spring, Colorado 80921
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Abstract

A thermally stable Pd/Ge/Ti/Pt/ ohmic contact with low specific contact resistance was formed on both n and p+-GaAs. The lowest specific contact resistances were 4.7×10−7 and 6.4×10−7 Ω.cm2 for the n and p+-GaAs, respectively, when the n-GaAs was doped with Si to 2×1018cm−3, and the p+-GaAs was doped with carbon to 5×1019 cm−3. Interfacial reactions and element diffusions of the contacts were investigated by using transmission electron microscopy, Auger electron spectrometry with depth profiles. All the contacts were thermally stable at 300 °C for 20 hours, and it appeared that the p-contacts were more stable than the n-contacts.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 709
Copyright
Copyright © Materials Research Society 1993

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References

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