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Microstructural Studies of Co Silicide Layers Formed on SiGe and SiGeC
Published online by Cambridge University Press: 03 September 2012
Abstract
Transmission electron microscopy is used to investigate the structural development as a function of the annealing temperature of Co-silicides prepared on SiGe and SiGeC. The transition temperature from Co(SiGe) into Co(SiGe)2 is higher for SiGeC than for SiGe.
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- Copyright © Materials Research Society 1997