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Microstructural Studies of Co Silicide Layers Formed on SiGe and SiGeC

Published online by Cambridge University Press:  03 September 2012

S. Jin ,
H. Bender ,
R.A. Donaton ,
K. Maex ,
A. Vantomme ,
G. Langouche ,
A.St. Amour  and
J.C. Sturm
S. Jin
Affiliation:
IMEC, Kapeldreef 75, B-3001, Leuven, Belgium
H. Bender
Affiliation:
IMEC, Kapeldreef 75, B-3001, Leuven, Belgium
R.A. Donaton
Affiliation:
IMEC, Kapeldreef 75, B-3001, Leuven, Belgium
K. Maex
Affiliation:
IMEC, Kapeldreef 75, B-3001, Leuven, Belgium
A. Vantomme
Affiliation:
Instituut Kern- en Stralingsfysica, University of Leuven, B-3001 Leuven, Belgium
G. Langouche
Affiliation:
Instituut Kern- en Stralingsfysica, University of Leuven, B-3001 Leuven, Belgium
A.St. Amour
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ08544, USA
J.C. Sturm
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ08544, USA
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Abstract

Transmission electron microscopy is used to investigate the structural development as a function of the annealing temperature of Co-silicides prepared on SiGe and SiGeC. The transition temperature from Co(SiGe) into Co(SiGe)2 is higher for SiGeC than for SiGe.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 359
Copyright
Copyright © Materials Research Society 1997

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