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The Microstructural Response of a Multilayer Thin Film to Local Laser Heating

Published online by Cambridge University Press:  21 February 2011

Matthew R. Libera ,
Martin Chen  and
Kurt A. Rubin
Matthew R. Libera
Affiliation:
IBM Research Division, Almaden Research Center, San Jose CA
Martin Chen
Affiliation:
IBM Research Division, Almaden Research Center, San Jose CA
Kurt A. Rubin
Affiliation:
IBM Research Division, Almaden Research Center, San Jose CA
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Abstract

The microstructures associated with pulsed-laser heating of multilayer thin films used for phase-change optical data storage are studied in three related films. Two employ the multilayer structure SiOx/TeGeSn/SiOx where the chalcogenide layer is either amorphous or crystalline. The third uses the same trilayer structure with a crystalline chalcogenide layer but with an additional layer of aluminum. Pulsed-laser melting of micron-sized spots leads to solidification in the non-aluminized specimens with a morphology dependent on the preexisting structure of the chalcogenide layer and to amorphization in the aluminized film. Heat-flow modelling shows that the maximum temperature reached is lower and the cooling rate through the glass-forming temperature range higher in the aluminized structure. Discussion centers on the thermal and optical properties of the different films and the impact of the pre-existing chalcogenide structure on the subsequent phase transformations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 152: Symposium H – Optical Materials: Processing and Science , 1989 , 121
Copyright
Copyright © Materials Research Society 1989

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References

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