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Microstructural, Optical and Electrical Properties Of Post-Annealed ZnO:Al Thin Films

Published online by Cambridge University Press:  14 February 2012

Coralie Charpentier ,
Patricia Prod’Homme ,
Loïc Francke  and
Pere Roca i Cabarrocas
Coralie Charpentier
Affiliation:
TOTAL S.A., Gas & Power R&D Division Tour Lafayette, 2 place des Vosges La Défense 6, 92400 Courbevoie, France. LPICM-CNRS, Laboratoire de Physique des Interfaces et Couches Minces, Ecole Polytechnique, 91128 Palaiseau, France.
Patricia Prod’Homme
Affiliation:
TOTAL S.A., Gas & Power R&D Division Tour Lafayette, 2 place des Vosges La Défense 6, 92400 Courbevoie, France.
Loïc Francke
Affiliation:
TOTAL S.A., Gas & Power R&D Division Tour Lafayette, 2 place des Vosges La Défense 6, 92400 Courbevoie, France.
Pere Roca i Cabarrocas
Affiliation:
LPICM-CNRS, Laboratoire de Physique des Interfaces et Couches Minces, Ecole Polytechnique, 91128 Palaiseau, France.
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Abstract

Aluminum-doped zinc oxide (ZnO:Al) thin films were prepared on glass substrates by radio frequency (RF) magnetron sputtering from a ceramic mixed target ZnO:Al2O3 (1 wt.%) with a power of 250 W. Two series of samples were deposited at room temperature, the first one in pure Ar atmosphere, the second one in Ar/O2 gas mixture. Effects of post-deposition annealing treatments carried out from 400 °C to 500 °C under vacuum and in N2/H2 (5%) atmosphere have been investigated. The influence of these parameters was studied by a detailed microstructural analysis using X-Ray diffraction and Raman spectroscopy. For N2/H2 annealing process, the increase of charge carrier concentration limits the increase of the mobility while after vacuum annealing, an improvement of both electrical and optical properties was observed. The increase of the crystallinity and grain size for ZnO:Al films deposited in Ar/O2 gas mixture could explain their improvements. Resistivity was reduced down to 3.5×10-4 Ω.cm, for a mobility of 49 cm2/V.s with a vacuum annealing at 450 °C for ZnO:Al deposited in Ar/O2 gas mixture.

Keywords

transparent conductorannealingelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1394: Symposium M – Oxide Semiconductors–Defects, Growth and Device Fabrication , 2012 , mrsf11-1394-m13-18
Copyright
Copyright © Materials Research Society 2012

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