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Microstructural Observation of Focused Ion Beam Modification of Ni Silicide/Si Thin Films

Published online by Cambridge University Press:  03 September 2012

Miyoko Tanaka ,
Kazuo Furuya  and
Tetsuya Saito
Miyoko Tanaka
Affiliation:
iron@nrim. go. Jp
Kazuo Furuya
Affiliation:
National Research Institute for Metals, 1-2-1 Sengen, Tsukuba, Ibaraki 305, Japan+81-298–53–1180, +81–298–53–1199,
Tetsuya Saito
Affiliation:
National Research Institute for Metals, 1-2-1 Sengen, Tsukuba, Ibaraki 305, Japan+81-298–53–1180, +81–298–53–1199,
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Abstract

Focused ion beam (FIB) irradiation of a thin Ni2Si layer deposited on a Si substrate was carried out and studied using an in-situ transmission electron microscope (in-situ TEM). Square areas on sides of 4 by 4 and 9 by 9 μm were patterned at room temperature with a 25keV Ga+-FIB attached to the TEM. The structural changes of the films indicate a uniform milling; sputtering of the Ni2Si layer and the damage introducing to the Si substrate. Annealing at 673 K results in the change of the Ni2Si layer into an epitaxial NiSi2 layer outside the FIB irradiated area, but several precipitates appear around the treated area. Precipitates was analyzed by energy dispersive X-ray spectroscopy (EDS). Larger amount of Ni than the surrounding matrix was found in precipitates. Selected area diffraction (SAD) patterns of the precipitates and the corresponding dark field images imply the formation of a Ni rich silicide. The relation between the FIB tail and the precipitation is indicated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 313
Copyright
Copyright © Materials Research Society 1997

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