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A Microstructural Model of the Electrical Failure of an Interconnect Resulting from Flux Divergences

Published online by Cambridge University Press:  15 February 2011

J. M. Rickman ,
D. A. Smith  and
C. S. Nichols
J. M. Rickman
Affiliation:
Department of Materials Science and Engineering, Lehigh University Bethlehem, PA 18015
D. A. Smith
Affiliation:
Department of Materials Science and Engineering, Lehigh University Bethlehem, PA 18015
C. S. Nichols
Affiliation:
Department of Materials Science and Engineering, Lehigh University Bethlehem, PA 18015
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Abstract

A simplified microstructural model of an interconnect is considered in order to develop a criterion for failure due to void production induced by electromigration. The kinetics of growth of individual voids at grain triple junctions are calculated and the time dependence of the change in conductance of an interconnect estimated from the time dependence of the total volume of voids produced. It is found that the time to failure increases with increasing grain size, i.e., decreasing density of sites for flux divergence, consistent with observations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 403: Symposium I – Polycrystalline Thin Films: Structure, Texture, Properties and Applications II , 1995 , 627
Copyright
Copyright © Materials Research Society 1996

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