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Microstructural Evolution and Defects in Ultra-thin SIMOX Materials during Annealing

Published online by Cambridge University Press:  01 February 2011

Jun Sik Jeoung ,
Rachel Evans  and
Supapan Seraphin
Jun Sik Jeoung
Affiliation:
Department of Materials Science and Engineering, The University of Arizona, Tucson, AZ 85721, U.S.A.
Rachel Evans
Affiliation:
Department of Materials Science and Engineering, The University of Arizona, Tucson, AZ 85721, U.S.A.
Supapan Seraphin
Affiliation:
Department of Materials Science and Engineering, The University of Arizona, Tucson, AZ 85721, U.S.A.
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Abstract

The microstructure of ultra-thin SIMOX depends strongly on implantation dose, energy and annealing conditions. We used TEM combined with AES and RBS to determine the microstructural evolution of SIMOX wafers subjected to various temperatures during annealing. We found that an optimum dose window to produce a continuous buried oxide layer without Si islands is 3.0-3.5×1017 O+/cm2 for 100 keV. The thickness of the silicon overlayer and BOX layer produced in this dose window was about 170 nm and 75 nm respectively. RBS analysis showed that a high quality crystalline Si layer was produced after annealing at 1350 °C for 4 hrs. The defect density was very low (< 300/cm2) for all samples implanted at 100 keV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B1.2
Copyright
Copyright © Materials Research Society 2002

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