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Microstructural Effects in the Thermochromic Behavior of VO2/Al/Si Thin Film Heterostructures

Published online by Cambridge University Press:  21 March 2011

K. Dovidenko ,
S. Beasor ,
A. Topol ,
H. Efstathiadis ,
S. Oktyabrsky ,
S. Shokhor ,
S. Naar  and
A.E. Kaloyeros
K. Dovidenko
Affiliation:
UAlbany Institute for Materials and Center for Advanced Thin Film Technology, the University at Albany-SUNY, Albany, New York, 12222, U.S.A.
S. Beasor
Affiliation:
UAlbany Institute for Materials and Center for Advanced Thin Film Technology, the University at Albany-SUNY, Albany, New York, 12222, U.S.A.
A. Topol
Affiliation:
UAlbany Institute for Materials and Center for Advanced Thin Film Technology, the University at Albany-SUNY, Albany, New York, 12222, U.S.A.
H. Efstathiadis
Affiliation:
UAlbany Institute for Materials and Center for Advanced Thin Film Technology, the University at Albany-SUNY, Albany, New York, 12222, U.S.A.
S. Oktyabrsky
Affiliation:
UAlbany Institute for Materials and Center for Advanced Thin Film Technology, the University at Albany-SUNY, Albany, New York, 12222, U.S.A.
S. Shokhor
Affiliation:
CopyTele, Inc., Melville, New York 11747, U.S.A.
S. Naar
Affiliation:
CopyTele, Inc., Melville, New York 11747, U.S.A.
A.E. Kaloyeros
Affiliation:
UAlbany Institute for Materials and Center for Advanced Thin Film Technology, the University at Albany-SUNY, Albany, New York, 12222, U.S.A.
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Abstract

We present the results of detailed chemical and structural characterization of the VO2/Al/Si(100) thin film heterostructures fabricated by chemical vapor deposition and physical vapor deposition methods. The presence of the thermochromic behavior in the VO2 layer around 68°C and its correlation with the layer composition and structure are discussed. The study compares the structural and chemical properties of the two types of thin VO2 layers: one which exhibits a metal-insulator phase transition around 68°C, and another which fails to undergo the temperature-induced transition. The study of interfaces was carried out by transmission electron microscopy, and showed the existence of an aluminum oxide interfacial layer between VO2 and Al for the samples with the metal-insulator phase transition. The smooth VO2/Al interface and the presence of more than one VO2 monoclinic polytypes were observed for the CVD films exhibiting no phase transition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 654: Symposia AA – Structure-Property Relationships of Oxide Surfaces & Interfaces , 2000 , AA3.42.1
Copyright
Copyright © Materials Research Society 2001

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References

1. Morin, F.J., “Oxides which show a metal-to -insulator transition at the Neel temperature”, Physical Review Letters, 3, 34 (1959).Google Scholar
2. Gurvitch, M., Halioua, M., Kastalsky, A., Naar, S., and Shokhorr, S., US patent, patent number 5,896,005, High Speed Solid State Optical Display (1999).Google Scholar
3. Chudnovskii, F.A., Soviet Physics Technical Physics, 20, 999 (1975).Google Scholar
4. Griffiths, C.H., Eastwood, H.K., J. Appl. Phys. 45, 2201 (1974).Google Scholar
5. Beasor, S.H., “A Study of Phase Transition Mechanisms in Vanadium Dioxide Thin Films for Flat Panel Display Applications”, M.S. Thesis, College of Arts and Sciences, Department of Physics, University at Albany SUNY (2000).Google Scholar