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Microstructural Development at Ti-Based Alloy/Coated SiC

Published online by Cambridge University Press:  15 February 2011

M. Strangwood
Affiliation:
The University of Birmingham, Faculty of Engineering, School of Metallurgy and Materials, Edgbaston, Birmingham B15 2TT, United Kingdom
C.B. Ponton
Affiliation:
The University of Birmingham, Faculty of Engineering, School of Metallurgy and Materials, Edgbaston, Birmingham B15 2TT, United Kingdom
M.P. Delplancke
Affiliation:
Université Libre de Bruxelles, Faculty for Applied Sciences, Metallurgy-Electrochemistry, 50 av. F.D. Roosevelt, 1050 Brussels, Belgium
V. Vassileris
Affiliation:
Université Libre de Bruxelles, Faculty for Applied Sciences, Metallurgy-Electrochemistry, 50 av. F.D. Roosevelt, 1050 Brussels, Belgium
R. Winand
Affiliation:
Université Libre de Bruxelles, Faculty for Applied Sciences, Metallurgy-Electrochemistry, 50 av. F.D. Roosevelt, 1050 Brussels, Belgium
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Abstract

The kinetics of formation of reaction layers at the interface between a Ti-based alloy (β-21s) and graphite blocks coated first, by CVD techniques, with a 100 μm layer of SiC and then either TiC or C were determined. The rate controlling step for reaction at 900°C and 10 MPa for up to 6 hours was found to be carbon diffusion through the reaction layer. The behaviour was found to be consistent with that of composite systems for prolonged heat treatment and the same growth behaviour was exhibited by both systems. Incubation times of 0.42 and 0.9 hours were determined for reaction layer growth in the TiC- and C-coated systems respectively. The reaction layer/Ti-alloy bond strength was good but all couples failed readily, especially if any C layers remained. The growth conditions of TiC coatings by reactive magnetron sputtering were determined for two different types of gas mixtures: CH4/Ar and C2H2/Ar. The composition and structure of the films were extensively studied.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

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