Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-25T18:43:47.312Z Has data issue: false hasContentIssue false
  • English
  • Français

Microstructural Characterization of GaAs Substrates

Published online by Cambridge University Press:  25 February 2011

T. M. Moore ,
S. Matteso ,
W. M. Duncan  and
R. J. Matyi
T. M. Moore
Affiliation:
Texas Instruments, Incorporated, Central Research Laboratories, Dallas, TX 75265
S. Matteso
Affiliation:
Texas Instruments, Incorporated, Central Research Laboratories, Dallas, TX 75265
W. M. Duncan
Affiliation:
Texas Instruments, Incorporated, Central Research Laboratories, Dallas, TX 75265
R. J. Matyi
Affiliation:
Texas Instruments, Incorporated, Central Research Laboratories, Dallas, TX 75265
Get access

Abstract

The defect microstructures of GaAs substrates have been investigated in a multi-technique approach including integral cathodoluminescence (CL), scanning electron acoustic microscopy (SEAM), double crystal x-ray topography (XRT), and defect delineation etch. The XRT, CL, and SEAM studies are of identical areas on<100> SI GaAs(Cr) grown by the liquid encapsulated Czochralski (LEC) method and by the horizontal Bridgman (HB) method. Correlation was made to the defect structure revealed by defect delineation etching. The samples were also characterized by Fourier transform photoluminescence (FTPL) to qualitatively identify the major transitions contributing to the CL images. The CL, SEAM, XRT, and defect delineation etch images of each material are compared and their different perspectives are discussed.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 69: Symposium D – Materials Characterization , 1986 , 379
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kamejima, T., Shimura, F., Matsumoto, Y., Watanabe, H., and Mitsui, J., Jpn. J. Appl. Phys. 21, L721 (1982).Google Scholar
2. Chin, A.K., Von Neida, A.R., and Caruso, R., J. Electrochem. Soc. 129, 2387 (1982).Google Scholar
3. Wakefield, B. and Davey, S.T., Inst. Phys. Conf. Ser. No. 76: Section 8, edited by 373 (1985).Google Scholar
4. Chin, A.K., Caruso, R., Young, M.S.S., and Von Neida, A.R., Appl. Phys. Lett. 45 552 (1984).CrossRefGoogle Scholar
5. Rosencwaig, A., VLSI Electronics: Microstructural Science, Vol.9, edited by (Academic Press, New York, 1985), p. 227.Google Scholar
6. Rosencwaig, A., SEM/1984/IV, edited by Johari, O. (SEM, Inc., Chicago, 1984), p. 1611.Google Scholar
7. Marek, J. and Strausser, Y.E., Appl. Phys. Lett. 44 1152 (1984).Google Scholar
8. Chin, A.K., SEM/1982/IIl, edited by Johari, O. (SEM, Inc. Chicago, 1982), p. 1069.Google Scholar
9. Therma-Wave, Inc., 47734 Westinghouse Dri., Freemont, Ca. 94539.Google Scholar
10. Duncan, W.M., Lee, J.W., Matyi, R.J., and Liu, H.-Y., J. Appl. Phys. 59, 2161 (1986).Google Scholar
11. Weyher, J. and Van de Ven, J., J. Crystal Growth 63, 285 (1983).CrossRefGoogle Scholar
12. Wakefield, B., Leigh, P.A., Lyons, M.H., and Elliot, C.R., Appl. Phys. Lett. 45, 66 (1984).CrossRefGoogle Scholar
13. Warwick, C.A. and Brown, G.T., Appl. Phys. Lett. 46, 574 (1985).Google Scholar
14. Goldstein, J.I., et al., Scanning Electron Microscopy and X-Ray Microanalysis (Plenum Press, New York, 1981), p. 342.CrossRefGoogle Scholar
15. Holt, D.B., Quantitative Scanning Electron Microscopy, edited by Holt, D.B., et al. (Academic Press, New York, 1974), p. 362.Google Scholar