Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-27T01:55:31.962Z Has data issue: false hasContentIssue false
  • English
  • Français

Microstructural and Optical Properties of Nitrogen Doped ZnO Nanowires

Published online by Cambridge University Press:  18 December 2012

Ahmed Souissi ,
Nadia Hanèche ,
Corinne Sartel ,
Abdel Meftah ,
Alain Lusson ,
Meherzi Oueslati ,
Jean-Marie Bluet ,
Bruno Masenelli ,
Vincent Sallet  and
Pierre Galtier
Ahmed Souissi
Affiliation:
Groupe d’Etude de la Matière Condensée (GEMaC), Université de Versailles Saint-Quentin-en Yvelines / CNRS, 45 avenue des Etats-Unis, 78035 Versailles, France Département de Physique, Université El-Manar, Tunis, Tunisie
Nadia Hanèche
Affiliation:
Groupe d’Etude de la Matière Condensée (GEMaC), Université de Versailles Saint-Quentin-en Yvelines / CNRS, 45 avenue des Etats-Unis, 78035 Versailles, France
Corinne Sartel
Affiliation:
Groupe d’Etude de la Matière Condensée (GEMaC), Université de Versailles Saint-Quentin-en Yvelines / CNRS, 45 avenue des Etats-Unis, 78035 Versailles, France
Abdel Meftah
Affiliation:
Département de Physique, Université El-Manar, Tunis, Tunisie
Alain Lusson
Affiliation:
Groupe d’Etude de la Matière Condensée (GEMaC), Université de Versailles Saint-Quentin-en Yvelines / CNRS, 45 avenue des Etats-Unis, 78035 Versailles, France
Meherzi Oueslati
Affiliation:
Groupe d’Etude de la Matière Condensée (GEMaC), Université de Versailles Saint-Quentin-en Yvelines / CNRS, 45 avenue des Etats-Unis, 78035 Versailles, France
Jean-Marie Bluet
Affiliation:
Institut des Nanotechnologies de Lyon, INSA, 69621 Villeubanne, France
Bruno Masenelli
Affiliation:
Institut des Nanotechnologies de Lyon, INSA, 69621 Villeubanne, France
Vincent Sallet
Affiliation:
Groupe d’Etude de la Matière Condensée (GEMaC), Université de Versailles Saint-Quentin-en Yvelines / CNRS, 45 avenue des Etats-Unis, 78035 Versailles, France
Pierre Galtier
Affiliation:
Groupe d’Etude de la Matière Condensée (GEMaC), Université de Versailles Saint-Quentin-en Yvelines / CNRS, 45 avenue des Etats-Unis, 78035 Versailles, France
Get access

Abstract

Nanowires with different nitrogen concentrations were grown by Metal-Organic Chemical Vapor Deposition (MOCVD) using DEZn, N2O and NH3as zinc, oxygen and nitrogen doping sources respectively. Low temperature photoluminescence, Raman spectroscopy and Transmission Electron Microscopy are combined to study the incorporation of nitrogen in the wires. The observation of donor-acceptor pair band confirms that the incorporation nitrogen in ZnO nanowires is responsible for the creation of acceptor centers. The additional peaks observed in Raman are correlated to nano-sized inter-atomic distance fluctuations observed in TEM. These domains combined with a resonance effect are probably the explanation of the huge Raman cross section observed for the impurity related peaks.

Keywords

oxidesemiconductingnanostructure
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1494: Symposium Z – Oxide Semiconductors and Thin Films , 2013 , pp. 13 - 18
Copyright
Copyright © Materials Research Society 2012 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Lyons, J. L., Janotti, A., and Van de Walle, C. G., , Appl. Phys. Lett., 95, 252105 (2009).CrossRefGoogle Scholar
Nickel, N. and Gluba, M.A., Phys. Rev. Lett., 103, 145501 (2009).CrossRefGoogle Scholar
Perillat-Merceroz, G., Jouneau, PH, Feuillet, G, Thierry, R, Rosina, M and Ferret, P, Journal of Physics: Conference Series, 209, 012034 (2010).Google Scholar
Reynolds, D. C., Look, D. C., Jogai, B., Litton, C. W., Collins, T. C., Harsch, W., and Cantwell, G., Phys. Rev. B 57, 12151 (1998).CrossRefGoogle Scholar
Yamauchi, S., Goto, Y. and Hariu, T., J. Crystal Growth, 260, 1 (2004).CrossRefGoogle Scholar
Kaschner, , Haboeck, U., Strassburg, M., Strassburg, M., Kaczmarczyk, G., Hoffmann, A., Thomsen, C., Zeuner, A., Alves, H. R., Hofmann, D. M., and Meyer, B. K., Appl. Phys. Lett., 80, 1909 (2002).CrossRefGoogle Scholar
Friedrich, F. and Nickel, H., Appl. Phys. Lett., 91, 111903 (2007).CrossRefGoogle Scholar
Bundesmann, C., Ashkenov, N., Schubert, M., Spemann, D., Butz, T., Kaidashev, E.M., Lorenz, M. and Grundmann, M., Appl. Phys. Lett., 83, 1974 (2003).CrossRefGoogle Scholar
Artùs, L., Cusco, R., Alarcon-Llado, E., Gonzalez-Diaz, G., Martil, I., Jimenez, J., Wang, B., Callahan, M., Appl. Phys. Lett., 90, 181911 (2007).CrossRefGoogle Scholar
Friederich, F., Gluba, M.A. and Nickel, N. H., Appl. Phys. Lett., 95, 141903 (2009).CrossRefGoogle Scholar
Iwata, K., Fons, P., yamada, A., Matsubara, K. and Niki, S., J. Crystal Growth, 209, 526 (2000).CrossRefGoogle Scholar
Cardona ang, M. Güntherodt, G., Light Scattering in Solids II (Springer, Berlin /Heidelberg/New-York, 1982).CrossRefGoogle Scholar