Hostname: page-component-cd9895bd7-mkpzs Total loading time: 0 Render date: 2024-12-27T01:37:25.278Z Has data issue: false hasContentIssue false
  • English
  • Français

Microstructural and Electrical Characterization of Misfit Dislocations at the InAs/GaP Heterointerface

Published online by Cambridge University Press:  10 February 2011

V. Gopal ,
T. P. Chin ,
A. L. Vasiliev ,
J. M. Woodall  and
E. P. Kvam
V. Gopal
Affiliation:
School of Materials Engineering, Purdue University, W. Lafayette, IN.
T. P. Chin
Affiliation:
School of Electrical and Computer Engineering, Purdue University, W. Lafayette, IN.
A. L. Vasiliev
Affiliation:
School of Materials Engineering, Purdue University, W. Lafayette, IN.
J. M. Woodall
Affiliation:
School of Electrical and Computer Engineering, Purdue University, W. Lafayette, IN.
E. P. Kvam
Affiliation:
School of Materials Engineering, Purdue University, W. Lafayette, IN.
Get access

Abstract

InAs is a narrow band gap semiconductor with potential for such applications as IR detectors, low temperature transistors, etc‥ However, the lack of suitable substrates has hampered progress in the development of InAs based devices. In the present study, InAs was grown by Molecular Beam Epitaxy on (001) GaP substrates. Though this system has a high lattice mismatch, (∼11%), certain MBE growth conditions result in 80% relaxed InAs layers on GaP with the mismatch accommodated predominantly by 90° pure edge dislocations. Misfit dislocation microstructures were studied using Transmission Electron Microscopy. Electrical characterization using lateral conductance and Hall effect measurements were also performed. Preliminary results indicate the possibility of misfit dislocation related conductivity. The possible correlation between interface structure and electrical properties is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 500: Symposium EE – Electrically Based Microstructural Characterization II , 1997 , 63
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ourmazd, A., Hull, R. and Tung, R.T. in Materials Science and Technology - A Comprehensive Treatment Vol. 4, edited by Schroter, W. (VCH Publishers, New York, 1991), pp 402–422.Google Scholar
2. Kvam, E.P., Maherand, D.M., Humphreys, C.J., J. Mater. Res. 5, 1900 (1990).Google Scholar
3. Chen, E.H., Chin, T.P., Woodall, J.M. and Lundstrom, M.S., Appl. Phys. Lett. 70, (1997).Google Scholar
4. Chang, J.C.P., Chin, T.P. and Woodall, J.M., Appl. Phys. Lett. 69, 981 (1996).Google Scholar
5. Schroder, D.K., Semiconductor Device and Material Characterization, (Wiley, New York, 1990)Google Scholar
6. Hornstra, J., J. Phys. Chem. Solids 5, 129 (1958).Google Scholar
7. Nandedkar, A.S. and Narayan, J., Phil. Mag. A, 56, 625 (1987).Google Scholar
8. Yazawa, M., Koguchi, M., Muto, A. and Hiruma, K., Adv Mater. 5, 577 (1993).Google Scholar
9. Mostoller, M., Chisholm, M.F. and Kaplan, T., Phys. Rev. Lett 72, 1494 (1994).Google Scholar