Hostname: page-component-7bb8b95d7b-qxsvm Total loading time: 0 Render date: 2024-10-02T15:15:01.421Z Has data issue: false hasContentIssue false
  • English
  • Français

Microstructural and Electrical Characterization of (Ba,Sr)TiO3 Thin Films Prepared by a New Carboxylate Free Chemical Solution Deposition (CSD) route

Published online by Cambridge University Press:  01 February 2011

Sandip Halder ,
Theodor Schneller  and
Rainer Waser
Sandip Halder
Affiliation:
Institute Für Werkstoffe dr Elektrotechnik- II, RWTH Aachen, Germany
Theodor Schneller
Affiliation:
Institute Für Werkstoffe dr Elektrotechnik- II, RWTH Aachen, Germany
Rainer Waser
Affiliation:
Institute Für Werkstoffe dr Elektrotechnik- II, RWTH Aachen, Germany Institut fur Festkoerperforschung, Forchungzentrum Juelich, Juelich, Germany
Get access

Abstract

A new type of alkoxide precursor was developed to avoid the formation of the oxo-carbonate phase as an intermediate phase during crystallization. The precursors were synthesized from Ba metal, Sr metal and aminoethanol. The new precursors were found to be quite stable and soluble in a number of organic solvents. Films were prepared by depositing the precursor solution on Pt coated Silicon wafers and crystallized between 550 and 700°C. The films were found to crystallize only above 600°C. After crystallization Pt top electrodes were deposited by sputtering and lift off processing. FT-IR studies were performed on the films to check for any oxo-carbonate phase. Microstructural studies involving XRD, SEM and AFM were performed on the films. The films were found to have a dielectric constant of around 400 with a tunability of around 37%. The frequency and temperature dependence of the dielectric constant were also studied. In addition leakage studies were performed on the films at various temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 784: Symposium C – Ferroelectric Thin Films XII , 2003 , C8.17
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kotecki, D. E., Baniecki, J. D., Shen, H., and Athavale, S. D., IBM J. Res. Dev. 43(3), 367 (1999).Google Scholar
2. Wang, Y.P. and Tseng, T.Y., J. Appl. Phys. 81 6762 (1997).Google Scholar
3. Hsu, H.Y., Luttmer, J.D., Tsu, R., Summerfelt, S., Bedekar, M., Tokumoto, T., and Nulman, J.. Appl. Phys. Lett. 66, 2975, (1995).Google Scholar
4. Schwartz, R.W., Schneller, T. and Waser, R., Comptes Rendus Chimie (submitted Oct. 2003)Google Scholar
5. Shin, J.C., Park, J., Hwang, C.S. and Kim, H.J., J. Appl. Phys. 86, 506 (1999)Google Scholar
6. Levin, I., Leapman, R.D. and Kaiser, D. L., J. Mater. Res. 15(7) 1433 (2000)Google Scholar
7. Saha, S. and Krupanidhi, S.B., J. Appl. Phys. 87, 849 (2000)Google Scholar
8. Halder, S., Schneller, T. and Waser, R., J. Sol-Gel Sci. Tech, (submitted Nov. 2003)Google Scholar
9. Dietz, G.W., Schumacher, M., Waser, R., Streiffer, S.K., Basceri, C. and Kingon, A.I., J. Appl. Phys. 82, 2359 (1997)Google Scholar
10. Dietz, G. W., Schumacher, M., Waser, R., Streiffer, S. K., Basceri, C., and Kingon, A. I., J. Appl. Phys. 85, 287 (1998).Google Scholar